Miniature RF and microwave components and methods for fabricating such components

ABSTRACT

RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).

RELATED APPLICATIONS

This application claims priority to U.S. Provisional Patent ApplicationNos.: 60/338,638 filed on Dec. 3, 2001; 60/340,372 filed on Dec. 6,2001; 60/379,133 filed on May 7, 2002; 60/379,182 filed on May 7, 2002;60/379,184 filed on May 7, 2002; 60/415,374 filed on Oct. 1, 2002;60/379,130 filed on May 7, 2002 and 60/392,531 filed on Jun. 27, 2002,all of which are incorporated herein by reference as if set forth infull.

FIELD OF THE INVENTION

Embodiments of this invention relate to the field of electrical devicesand their manufacture while specific embodiments relate to RF andmicrowave devices and their manufacture. More particularly embodimentsof this invention relate to miniature passive RF and microwave devices(e.g. filters, transmission lines, delay lines, and the like) which maybe manufactured using, at least in part, a multi-layer electrodepositiontechnique known as Electrochemical Fabrication.

BACKGROUND OF THE INVENTION

A technique for forming three-dimensional structures/devices from aplurality of adhered layers was invented by Adam Cohen and is known asElectrochemical Fabrication. It is being commercially pursued by MEMGenCorporation of Burbank, California under the trade name EFAB™. Thistechnique was described in U.S. Pat. No. 6,027,630, issued on Feb. 22,2000. This electrochemical deposition technique allows the selectivedeposition of a material using a unique masking technique that involvesthe formation of a mask that includes patterned conformable material ona support structure that is independent of the substrate onto whichplating will occur. When desiring to perform an electrodeposition usingthe mask, the conformable portion of the mask is brought into contactwith a substrate while in the presence of a plating solution such thatthe conformable portion inhibits deposition at selected locations. Forconvenience, these masks might be generically called conformable contactmasks; the masking technique may be generically called a conformablecontact mask plating process, and the like. More specifically, in theterminology of MEMGen Corporation of Burbank, Calif. such masks havecome to be known as INSTANT MASKS™ and the process known as INSTANTMASKING™ or INSTANT MASK™ plating. Selective depositions usingconformable contact mask plating may be used to form single layers ofmaterial or may be used to form multi-layer structures. The teachings ofthe '630 patent are hereby incorporated herein by reference as if setforth in full herein. Since the filing of the patent application thatled to the above noted patent, various papers about conformable contactmask plating (i.e. INSTANT MASKING) and electrochemical fabrication havebeen published:

-   1. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will,    “EFAB: Batch production of functional, fully-dense metal parts with    micro-scale features”, Proc. 9th Solid Freeform Fabrication, The    University of Texas at Austin, p161, August 1998.-   2. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will,    “EFAB: Rapid, Low-Cost Desktop Micromachining of High Aspect Ratio    True 3-D MEMS”, Proc. 12th IEEE Micro Electro Mechanical Systems    Workshop, IEEE, p244, January 1999.-   3. Cohen, “3-D Micromachining by Electrochemical Fabrication”,    Micromachine Devices, March 1999.-   4. G. Zhang, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld, and P.    Will, “EFAB: Rapid Desktop Manufacturing of True 3-D    Microstructures”, Proc. 2nd International Conference on Integrated    MicroNanotechnology for Space Applications, The Aerospace Co., April    1999.-   5. F. Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld, and P.    Will, “EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures    using a Low-Cost Automated Batch Process”, 3rd International    Workshop on High Aspect Ratio Microstructure Technology (HARMST'99),    June 1999.-   6. Cohen, U. Frodis, F. Tseng, G. Zhang, F. Mansfeld, and P. Will,    “EFAB: Low-Cost, Automated Electrochemical Batch Fabrication of    Arbitrary 3-D Microstructures”, Micromachining and Microfabrication    Process Technology, SPIE 1999 Symposium on Micromachining and    Microfabrication, September 1999.-   7. F. Tseng, G. Zhang, U. Frodis, A. Cohen, F. Mansfeld, and P.    Will, “EFAB: High Aspect Ratio, Arbitrary 3-D Metal Microstructures    using a Low-Cost Automated Batch Process”, MEMS Symposium, ASME 1999    International Mechanical Engineering Congress and Exposition,    November, 1999.-   8. Cohen, “Electrochemical Fabrication (EFABTM)”, Chapter 19 of The    MEMS Handbook, edited by Mohamed Gad-EI-Hak, CRC Press, 2002.-   9. “Microfabrication—Rapid Prototyping's Killer Application”, pages    1-5 of the Rapid Prototyping Report, CAD/CAM Publishing, Inc., June    1999.

The disclosures of these nine publications are hereby incorporatedherein by reference as if set forth in full herein.

The electrochemical deposition process may be carried out in a number ofdifferent ways as set forth in the above patent and publications. In oneform, this process involves the execution of three separate operationsduring the formation of each layer of the structure that is beingformed:

-   1. Selectively depositing at least one material by electrodeposition    upon desired region(s) of a substrate.-   2. Then, blanket depositing at least one additional material by    electrodeposition so that the additional deposit covers both the    region(s) that were previously selectively deposited onto and the    region(s) of the substrate that did not receive any previously    applied selective deposition(s).-   3. Finally, planarizing the materials deposited during the first and    second operations to produce a smoothed surface of a first layer of    desired thickness having at least one region containing the at least    one material and at least one region containing at least the one    additional material.

After formation of the first layer, one or more additional layers may beformed adjacent to the immediately preceding layer and adhered to thesmoothed surface of that preceding layer. These additional layers areformed by repeating the first through third operations one or moreadditional times wherein the formation of each subsequent layer treatsthe previously formed layers and the initial substrate as a new andthickening substrate.

Once the formation of all layers has been completed, at least a portionof at least one of the materials deposited is generally removed by anetching process to expose or release the three-dimensional structurethat was intended to be formed.

The preferred method of performing the selective electrodepositioninvolved in the first operation is by conformable contact mask plating.In this type of plating, one or more conformable contact (CC) masks arefirst formed. The CC masks include a support structure onto which apatterned conformable dielectric material is adhered or formed. Theconformable material for each mask is shaped in accordance with aparticular cross-section of material to be plated. At least one CC maskis needed for each unique cross-sectional pattern that is to be plated.

The support for a CC mask is typically a plate-like structure formed ofa metal that is to be selectively electroplated and from which materialto be plated will be dissolved. In this typical approach, the supportwill act as an anode in an electroplating process. In an alternativeapproach, the support may instead be a porous or otherwise perforatedmaterial through which deposition material will pass during anelectroplating operation on its way from a distal anode to a depositionsurface. In either approach, it is possible for CC masks to share acommon support, i.e. the patterns of conformable dielectric material forplating multiple layers of material may be located in different areas ofa single support structure. When a single support structure containsmultiple plating patterns, the entire structure is referred to as the CCmask while the individual plating masks may be referred to as“submasks”. In the present application such a distinction will be madeonly when relevant to a specific point being made.

In preparation for performing the selective deposition of the firstoperation, the conformable portion of the CC mask is placed inregistration with and pressed against a selected portion of thesubstrate (or onto a previously formed layer or onto a portion of alayer) on which deposition is to occur. The pressing together of the CCmask and substrate occur in such a way that all openings, in theconformable portions of the CC mask contain plating solution. TheConformable material of the CC mask that contacts the substrate acts asa barrier to electrodeposition in those locations while the openings inthe CC mask that are filled with electroplating solution act as pathwaysfor transferring material from an anode (e.g. the CC mask support) tothe non-contacted portions of the substrate (which act as a cathodeduring the plating operation) when an appropriate potential and/orcurrent are supplied.

An example of a CC mask and CC mask plating are shown in FIGS. 1(a)-1(c). FIG. 1( a) shows a side view of a CC mask 8 consisting of aconformable or deformable (e.g. elastomeric) insulator 10 patterned onan anode 12. The anode has two functions. One is as a supportingmaterial for the patterned insulator 10 to maintain its integrity andalignment since the pattern may be topologically complex (e.g.,involving isolated “islands” of insulator material). The other functionis as an anode for the electroplating operation. CC mask platingselectively deposits material 22 onto a substrate by simply pressing theinsulator against the substrate then electrodepositing material throughapertures 26 a and 26 b in the insulator as shown in FIG. 1( b). Afterdeposition, the CC mask is separated, preferably non-destructively, fromthe substrate 6 as shown in FIG. 1( c). The CC mask plating process isdistinct from a “through-mask” plating process in that in a through maskplating process the separation of the masking material from thesubstrate would occur destructively. As with through-mask plating, CCmask plating deposits material simultaneously over the entire layer. Theplated region may consist of one or more isolated plating regions wherethese isolated plating regions may belong to a single structure that isbeing formed or may belong to multiple structures that are being formedsimultaneously. In CC mask plating as individual masks are notintentionally destroyed in the removal process, they may be usable inmultiple plating operations.

Unlike through-mask plating, CC mask plating allows CC masks to beformed completely separate from the fabrication of the substrate onwhich plating is to occur (e.g. separate from a three-dimensional (3D)structure that is being formed). CC masks may be formed in a variety ofways, for example, a photolithographic process may be used. All maskscan be generated simultaneously, prior to structure fabrication ratherthan during it. This separation makes possible a simple, low-cost,automated, self-contained, and internally-clean “desktop factory” thatcan be installed almost anywhere to fabricate 3D structures, leaving anyrequired clean room processes, such as photolithography to be performedby service bureaus or the like.

An example of the electrochemical fabrication process discussed above isillustrated in FIGS. 2( a)-2(f). These figures show that the processinvolves deposition of a first material 2 which is a sacrificialmaterial and a second material 4 which is a structural material. The CCmask 8, in this example, includes a patterned conformable material (e.g.an elastomeric dielectric material) 10 and a support 12 which is madefrom deposition material 2. The conformal portion of the CC mask ispressed against substrate 6 with a plating solution 14 located withinthe openings 16 in the conformable material 10. An electric current,from power supply 18, is then passed through the plating solution 14 via(a) support 12 which doubles as an anode and (b) substrate 6 whichdoubles as a cathode. FIG. 2( a), illustrates that the passing ofcurrent causes material 2 within the plating solution and material 2from the anode 12 to be selectively transferred to and plated on thecathode 6. After electroplating the first deposition material 2 onto thesubstrate 6 using CC mask 8, the CC mask 8 is removed as shown in FIG.2( b). FIG. 2( c) depicts the second deposition material 4 as havingbeen blanket-deposited (i.e. non-selectively deposited) over thepreviously deposited first deposition material 2 as well as over theother portions of the substrate 6. The blanket deposition occurs byelectroplating from an anode (not shown), composed of the secondmaterial, through an appropriate plating solution (not shown) to thecathode/substrate 6. The entire two-material layer is then planarized toachieve precise thickness and flatness as shown in FIG. 2( d). Afterrepetition of this process for all layers, the multi-layer structure 20formed of the second material 4 (i.e. structural material) is embeddedin first material 2 (i.e. sacrificial material) as shown in FIG. 2( e).The embedded structure is etched to yield the desired device, i.e.structure 20, as shown in FIG. 2( f).

Various components of an exemplary manual electrochemical fabricationsystem 32 are shown in FIGS. 3( a)-3(c). The system 32 consists ofseveral subsystems 34, 36, 38, and 40. The substrate holding subsystem34 is depicted in the upper portions of each of FIGS. 3( a) to 3(c) andincludes several components: (1) a carrier 48, (2) a metal substrate 6onto which the layers are deposited, and (3) a linear slide 42 capableof moving the substrate 6 up and down relative to the carrier 48 inresponse to drive force from actuator 44. Subsystem 34 also includes anindicator 46 for measuring differences in vertical position of thesubstrate which may be used in setting or determining layer thicknessesand/or deposition thicknesses. The subsystem 34 further includes feet 68for carrier 48 which can be precisely mounted on subsystem 36.

The CC mask subsystem 36 shown in the lower portion of FIG. 3( a)includes several components: (1) a CC mask 8 that is actually made up ofa number of CC masks (i.e. submasks) that share a common support/anode12, (2) precision X-stage 54, (3) precision Y-stage 56, (4) frame 72 onwhich the feet 68 of subsystem 34 can mount, and (5) a tank 58 forcontaining the electrolyte 16. Subsystems 34 and 36 also includeappropriate electrical connections (not shown) for connecting to anappropriate power source for driving the CC masking process.

The blanket deposition subsystem 38 is shown in the lower portion ofFIG. 3( b) and includes several components: (1) an anode 62, (2) anelectrolyte tank 64 for holding plating solution 66, and (3) frame 74 onwhich the feet 68 of subsystem 34 may sit. Subsystem 38 also includesappropriate electrical connections (not shown) for connecting the anodeto an appropriate power supply for driving the blanket depositionprocess.

The planarization subsystem is shown in the lower portion of FIG. 3( c)and includes a lapping plate 52 and associated motion and controlsystems (not shown) for planarizing the depositions.

In addition to teaching the use of CC masks for electrodepositionpurposes, the '630 patent also teaches that the CC masks may be placedagainst a substrate with the polarity of the voltage reversed andmaterial may thereby be selectively removed from the substrate. Itindicates that such removal processes can be used to selectively etch,engrave, and polish a substrate, e.g., a plaque.

Electrochemical Fabrication provides the ability to form prototypes andcommercial quantities of miniature objects (e.g. mesoscale andmicroscale objects), parts, structures, devices, and the like atreasonable costs and in reasonable times. In fact, ElectrochemicalFabrication is an enabler for the formation of many structures that werehitherto impossible to produce. Electrochemical Fabrication opens a newdesign and product spectrum in many industrial fields. Even thoughelectrochemical fabrication offers this new capability and it isunderstood that Electrochemical Fabrication techniques can be combinedwith designs and structures known within various fields to produce newstructures, certain uses for Electrochemical Fabrication providedesigns, structures, capabilities and/or features not known or obviousin view of the state of the art within the field or fields of a specificapplication.

A need exists in the field of electrical components and systems andparticularly within the field of RF and microwave components and systemsfor devices having reduced size, reduced manufacturing cost, enhancedreliability, application to different frequency ranges, and/or otherenhanced features, and the like.

SUMMARY OF THE INVENTION

An object of various aspects of the invention is to provide RFcomponents having reduced size.

An object of various aspects of the invention is to provide RFcomponents producible with decreased manufacturing cost.

An object of various aspects of the invention is to provide RFcomponents with enhanced reliability.

An object of various aspects of the invention is to provide RFcomponents with design features making them applicable for use withinmore frequency bands.

An object of various aspects of the invention is to provide RFcomponents with features that provide enhanced capability, such asgreater bandwidth.

Other objects and advantages of various aspects of the invention will beapparent to those of skill in the art upon review of the teachingsherein. The various aspects of the invention, set forth explicitlyherein or otherwise ascertained from the teachings herein, may addressany one of the above objects alone or in combination, or alternativelymay address some other object of the invention ascertained from theteachings herein. It is not intended that all of these objects beaddressed by any single aspect of the invention even though that may bethe case with regard to some aspects.

It is an aspect of the invention to provide a microminiature RF ormicrowave coaxial component, that includes an inner conductor that hasan axis which is substantially coaxial with an axis an outer conductorwherein the inner and outer conductors are spaced from one another by adielectric gap wherein a minimum cross-sectional dimension from aninside wall of the outer conductor to an opposing inside wall of theouter conductor is less than about 200 μm. In a specific variation ofthis aspect of the invention the outer conductor has a substantiallyrectangular cross-sectional configuration.

It is an aspect of the invention to provide a coaxial RF or microwavecomponent that preferentially passes a radiation in a desired frequencyband, including: at least one RF or microwave radiation entry port in aconductive structure; at least one RF or microwave radiation exit portin the conductive structure; at least one passage, substantially boundedon the sides by the conductive structure, through which RF or microwaveradiation passes when traveling from the at least one entry port to theat least one exit port; a central conductor extending along the at leastone passage from the entry port to the exit port; and at least oneconductive spoke extending between the central conductor and theconductive structure at each of a plurality of locations wheresuccessive locations along the length of the passage are spaced byapproximately one-half of a propagation wavelength, or an integralmultiple thereof, within the passage for a frequency to be passed by thecomponent, wherein one or more of the following conditions are met (1)the central conductor, the conductive structure, and the conductivespokes are monolithic, (2) a cross-sectional dimension of the passageperpendicular to a propagation direction of the radiation along thepassage is less than about 1 mm, more preferably less than about 0.5 mm,and most preferably less than about 0.25 mm, (3) more than about 50% ofthe passage is filled with a gaseous medium, more preferably more thanabout 70% of the passage is filled with a gaseous medium, and mostpreferably more than about 90% of the passage is filled with a gaseousmedium, (4) at least a portion of the conductive portions of thecomponent are formed by an electrodeposition process, (5) at least aportion of the conductive portions of the component are formed from aplurality of successively deposited layers, (6) at least a portion ofthe passage has a generally rectangular shape, (7) at least a portion ofthe central conductor has a generally rectangular shape, (8) the passageextends along a two-dimensional non-linear path, (9) the passage extendsalong a three-dimensional path, (10) the passage includes at least onecurved region and a side wall of the passage in the curved region has anominally smaller radius than an opposite side of the passage in thecurved region and is provided with a plurality of surface oscillationshaving smaller radii, (11) the conductive structure is provided withchannels at one or more locations where the electrical field at asurface of the conductive structure, if it were there, would have beenless than about 20% of its maximum value within the passage, morepreferably less than 10% of its maximum value within the passage, evenmore preferably less than 5% of its maximum value within the passage,and most preferably where the electrical field would have beenapproximately zero, (12) the conductive structure is provided withpatches of a different conductive material at one or more locationswhere the electrical field at the surface of the conductive structure,if it were there, would have been less than about 20% of its maximumvalue within the passage more preferably less than about 10% of itsmaximum value within the passage, even more preferably less than about5% of its maximum value within the passage, and most preferably wherethe electrical field would have been approximately zero, (13) miteredcorners are used at least some junctions for segments of the passagethat meet at angles between 60° and 120°, and/or (14) the conductivespokes are spaced at an integral multiple of one-half the wavelength andbulges on the central conductor or bulges extending from the conductivestructure extend into the passage at one or more locations spaced fromthe conductive spokes by an integral multiple of approximately one-halfthe wavelength.

It is an aspect of the invention to provide a coaxial RF or microwavecomponent that preferentially passes a radiation in a desired frequencyband, including: at least one RF or microwave radiation entry port in aconductive structure; at least one RF or microwave radiation exit portin the conductive structure; at least one passage, substantially boundedon the sides by the conductive structure, through which RF or microwaveradiation passes when traveling from the at least one entry port to theat least one exit port; a central conductor extending along the at leastone passage from the entry port to the exit port; and at a plurality oflocations along a length of the passage, a pair of conductive stubsextending from approximately the same position along a length of thepassage, one having an inductive property and the other having acapacitive property, each extending into a closed channel that extendsfrom a side of the passage, wherein the successive locations along thelength of the passage are spaced by approximately one-quarter of apropagation wavelength, or an integral multiple thereof, within thepassage for a frequency to be passed by the component, wherein one ormore of the following conditions are met (1) the central conductor, theconductive structure, and the conductive stubs are monolithic, (2) across-sectional dimension of the passage perpendicular to a propagationdirection of the radiation along the passage is less than about 1 mm,more preferably less than about 0.5 mm, and most preferably less thanabout 0.25 mm, (3) more than about 50% of the passage is filled with agaseous medium, more preferably more than about 70% of the passage isfilled with a gaseous medium, and most preferably more than about 90% ofthe passage is filled with a gaseous medium, (4) at least a portion ofthe conductive portions of the component are formed by anelectrodeposition process, (5) at least a portion of the conductiveportions of the component are formed from a plurality of successivelydeposited layers, (6) at least a portion of the passage has a generallyrectangular shape, (7) at least a portion of the central conductor has agenerally rectangular shape, (8) the passage extends along atwo-dimensional non-linear path, (9) the passage extends along athree-dimensional path, (10) the passage includes at least one curvedregion and a side wall of the passage in the curved region has anominally smaller radius than an opposite side of the passage in thecurved region and is provided with a plurality of surface oscillationshaving smaller radii, (11) the conductive structure is provided withchannels at one or more locations where the electrical field at asurface of the conductive structure, if it were there, would have beenless than about 20% of its maximum value within the passage, morepreferably less than 10% of its maximum value within the passage, evenmore preferably less than 5% of its maximum value within the passage,and most preferably where the electrical field would have beenapproximately zero, (12) the conductive structure is provided withpatches of a different conductive material at one or more locationswhere the electrical field at the surface of the conductive structure,if it were there, would have been less than about 20% of its maximumvalue within the passage more preferably less than about 10% of itsmaximum value within the passage, even more preferably less than about5% of its maximum value within the passage, and most preferably wherethe electrical field would have been approximately zero, (13) miteredcorners are used at least some junctions for segments of the passagethat meet at angles between 60° and 120°, and/or (14) the conductivestubs are spaced at an integral multiple of one-quarter the wavelengthand bulges on the central conductor or bulges extending from theconductive structure extend into the passage at one or more locationsspaced from the conductive stubs by an integral multiple ofapproximately one-half the wavelength.

It is an aspect of the invention to provide a coaxial RF or microwavecomponent that guides or controls radiation, including: at least one RFor microwave radiation entry port in a conductive structure; at leastone RF or microwave radiation exit port in the conductive structure; atleast one passage substantially bounded on the sides by the conductivestructure through which RF or microwave radiation passes when travelingfrom the at least one entry port to the at least one exit port; acentral conductor extending along a length of the at least one passagefrom the entry port to the exit port; and a branch in the passage downwhich a branch of the central conductor runs and in which the centralconductor shorts against the conductive structure, wherein at least oneof the following conditions is met (1) the branch of the centralconductor, the conductive structure surrounding the branch, and alocation of shorting between the central conductor and the conductivestructure are monolithic, (2) at least a portion of the centralconductor or the conductive structure includes material formed from aplurality of successively deposited layers, and/or (3) at least aportion of the central conductor or the conductive structure includesmaterial formed by a plurality of electrodeposition operations.

It is an aspect of the invention to provide an RF or microwave componentthat guides or controls radiation, including: at least one RF ormicrowave radiation entry port in a conductive metal structure; at leastone RF or microwave radiation exit port in the conductive metalstructure; at least one passage substantially bounded on the sides bythe conductive metal structure through which RF or microwave energypasses when traveling from the at least one entry port to the at leastone exit port; and wherein at least one the following conditions aremet: (1) at least a portion of the conductive metal structure includes ametal formed by a plurality of electrodeposition operations, and/or (2)at least a portion of the conductive metal structure includes a metalformed from a plurality of successively deposited layers.

It is an aspect of the invention to provide an RF or microwave componentthat guides or controls radiation, including: at least one RF ormicrowave energy entry port in a conductive metal structure; and atleast one passage substantially bounded on the sides by the conductivemetal structure through which RF or microwave energy passes whentraveling from the at least one entry port; and wherein at least aportion of the metal structure includes a metal formed by a plurality ofelectrodeposition operations and/or from a plurality of successivelydeposited layers.

It is an aspect of the invention to provide an RF or microwave componentthat guides or controls radiation, that includes at least one RF ormicrowave radiation entry port and at least one exit port within aconductive metal structure; and at least one passage substantiallybounded on the sides by the conductive metal structure through which RFor microwave energy passes when traveling from the at least one entryport; and at least one branching channel along the at least one passage,wherein the conductive metal structure surrounding the passage and thechannel in proximity to a branching region of the channel from thepassage is monolithic.

In a specific variation of each aspect of the invention the productionincludes one or more of the following operations: (1) selectivelyelectrodepositing a first conductive material and electrodepositing asecond conductive material, wherein one of the first or secondconductive materials is a sacrificial material and the other is astructural material; (2) electrodepositing a first conductive material,selectively etching the first structural material to create at least onevoid, and electrodepositing a second conductive material to fill the atleast one void; (3) electrodepositing at least one conductive material,depositing at least one flowable dielectric material, and depositing aseed layer of conductive material in preparation for formation of a nextlayer of electrodeposited material, and/or (4) selectivelyelectrodepositing a first conductive material, then electrodepositing asecond conductive material, then selectively etching one of the first orsecond conductive materials, and then electrodepositing a thirdconductive material, wherein at least one of the first, second, or thirdconductive materials is a sacrificial material and at least one of theremaining two conductive materials is a structural material.

In a another specific variation of each aspect of the invention theproduction includes one or more of the following operations: (1)separating at least one sacrificial material from at least onestructural material; (2) separating a first sacrificial material from(a) a second sacrificial material and (b) at least one structuralmaterial to create a void, then filling at least a portion of the voidwith a dielectric material, and thereafter separating the secondsacrificial material from the structural material and from thedielectric material; and/or (3) filling a void in a structural materialwith a magnetic or conductive material embedded in a flowable dielectricmaterial and thereafter solidifying the dielectric material.

In another specific variation of each aspect of the invention thecomponent includes one or more of a microminiature coaxial component, atransmission line, a low pass filter, a high pass filter, a band passfilter, a reflection-based filter, an absorption-based filter, a leakywall filter, a delay line, an impedance matching structure forconnecting other functional components, a directional coupler, a powercombiner (e.g., Wilkinson), a power splitter, a hybrid combiner, a magicTEE, a frequency multiplexer, or a frequency demultiplexer, a pyramidal(i.e., smooth wall) feedhorn antenna, and/or a scalar (corrugated wall)feedhorn antenna.

It is an aspect of the invention to provide an electrical device,including: a plurality of layers of successively deposited material,wherein the pattern resulting from the depositions provide at least onestructure that is usable as an electrical device.

It is an aspect of the invention to provide a method of manufacturing anRF device, including: depositing a plurality of adhered layers ofmaterial, wherein the deposition of each layer of material comprises,selective deposition of at least a first material; deposition of atleast a second material; and planarization of at least a portion of thedeposited material; removal of at least a portion of the first or secondmaterial after deposition of the plurality of layers; wherein astructural pattern resulting from the deposition and the removalprovides at least one structure that is usable as an electrical device.

It is an aspect of the invention to provide a method of manufacturing amicrodevice, including: depositing a plurality of adhered layers ofmaterial, wherein the deposition of each layer of material comprises,deposition of at least a first material; deposition of at least a secondmaterial; and removing of at least a portion of the first or secondmaterial after deposition of the plurality of layers; wherein astructure resulting from the deposition and the removal provides atleast one structure that can function as (1) a toroidal inductor, (2) aswitch, (3) a helical inductor, or (4) an antenna.

It is an aspect of the invention to provide an apparatus formanufacturing a microdevice, including: means for depositing a pluralityof adhered layers of material, wherein the deposition of each layer ofmaterial comprises utilization of, a means for selective deposition ofat least a first material; a means for deposition of at least a secondmaterial; and means for removing at least a portion of the first orsecond material after deposition of the plurality of layers; wherein astructure resulting from use of the means for depositing and the meansfor removing provides at least one structure that can function as (1) atoroidal inductor, (2) a switch, (3) a helical inductor, or (4) anantenna.

It is an aspect of the invention to provide a microtoroidal inductor,including: a plurality of conductive loop elements configured to form atleast a portion of a toroidal pattern wherein the toroidal pattern maybe construed to have an inner diameter and an outer diameter and whereinat least a portion of the plurality of loops have a largercross-sectional dimension in proximity to the outer diameter than inproximity to the inner diameter.

It is an aspect of the invention to provide a microantenna, including:an antenna that is at least in part separated from a substrate.

It is an aspect of the invention to provide a method of manufacturing anRF device, including: depositing a plurality of adhered layers ofmaterial, wherein the deposition of each layer of material comprises,selective deposition of at least a first material; deposition of atleast a second material; and planarization of at least a portion of thedeposited material; removing at least a portion of the first or secondmaterial after deposition of a plurality of layers; wherein a structuralpattern resulting from the deposition and the removal provides at leastone structure that is usable as an RF device.

Further aspects of the invention will be understood by those of skill inthe art upon reviewing the teachings herein. Other aspects of theinvention may involve combinations of the above noted aspects of theinvention. Other aspects of the invention may involve methods and/orapparatus that can be used in implementing one or more of the aboveaspects of the invention. These other aspects of the invention mayprovide various combinations of the aspects presented above as well asprovide other configurations, structures, functional relationships, andprocesses that have not been specifically set forth above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1( a)-1(c) schematically depict side views of various stages of aCC mask plating process.

FIGS. 2( a)-2(f) schematically depict side views of various stages of anelectrochemical fabrication process as applied to the formation of aparticular structure where a sacrificial material is selectivelydeposited while a structural material is blanket deposited.

FIGS. 3( a)-3(c) schematically depict side views of various examplesubassemblies that may be used in manually implementing theelectrochemical fabrication method depicted in FIGS. 2( a)-2(f).

FIG. 4( a) depicts a perspective view of a coaxial filter element thatincludes shorting spokes.

FIG. 4( b) depicts a plan view of the coaxial filter of FIG. 4( a) alonglines 4(b)-4(b).

FIG. 4( c) depicts a plan view of the coaxial filter of FIG. 4( a) alonglines 4(c)-4(c).

FIG. 5 depicts a plan view of the central portion of a coaxial filterelement showing five sets of filtering spokes (two per set) along thelength of the filter.

FIGS. 6( a)-6(c) depict end views, respectively, of rectangular,circular, and elliptical filter elements each using sets of spokes (fourspokes per set).

FIGS. 7( a)-7(d) depict examples of alternative spoke configurationsthat may be used in filtering components.

FIGS. 8( a) and 8(b) illustrate perspective views of curved coaxialfilter components.

FIGS. 9( a)-9(c) depict alternative coaxial filter components that useprotrusions along the inner or outer conductor to aid in filtering ofsignals.

FIG. 9( d) depicts a plan view of the central portion, along the length,of an S-shaped two pole coaxial filter.

FIGS. 10( a)-10(d) depict plan views of the central portion, along thelength of horseshoe-shaped coaxial transmission lines with varyingdegrees of mitering.

FIGS. 11( a) and 11(b) depict, respectively, plan views along thecentral portions of a coaxial transmission line and a coaxial filtercomponent where wave-like oscillations are included on the insidesurface of the smaller radius side of the coaxial line.

FIG. 12( a) depicts a plan view (from the top) of the central portion,along the length, of a linear three-pole band pass coaxial filter usingpairs of stubs to form each pole.

FIG. 12( b) depicts an end view of the filter of FIG. 12( a)illustrating the rectangular configuration of the structure.

FIG. 12( c) depicts a plan view (from the top) of the central portion,along the length of a curved three-pole band pass coaxial filter withstub supports.

FIG. 13 depicts a plan view (from the top) of the central portion, alongthe length of an S-shaped two-pole band pass coaxial filter with stubsupports.

FIGS. 14( a) and 14(b) depict perspective views of coaxial filterelements embedded in sacrificial material and released from thesacrificial material, respectively, where the outer conductor of thecoaxial components includes holes (in other than the intended microwaveentrance and exit openings).

FIGS. 15( a)-15(d) illustrate plots of transmission versus frequencyaccording to mathematical models for various filter designs.

FIG. 16 depicts a flowchart of a sample electrochemical fabricationprocess that uses a single conductive material and a single dielectricmaterial in the manufacture of a desired device/structure.

FIG. 17( a) depicts an end view of a coaxial structure that can beproduced using the process of FIG. 16.

FIG. 17( b) depicts a perspective view of the coaxial structure of FIG.17( a)

FIGS. 18( a)-18(j) illustrate application of the process flow of FIG. 16to form the structure of FIGS. 17( a) and 17(b).

FIG. 19 depicts a flowchart of a sample electrochemical fabricationprocess that includes the use of three conductive materials.

FIGS. 20( a) and 20(b) depict perspective views of structures thatinclude conductive elements and dielectric support structures that maybe formed according to extensions of the process of FIG. 19.

FIGS. 21( a)-21(t) illustrate application of the process flow of FIG. 19to form a coaxial structure similar to that depicted in FIG. 20( a)where two of the conductive materials are sacrificial materials that areremoved after formation of the layers of the structure and wherein adielectric material is used to replace one of the removed sacrificialmaterials.

FIGS. 22( a)-22(c) illustrate the extension of the removal andreplacement process of FIGS. 21( r)-21(t).

FIGS. 23( a) and 23(b) depict a flowchart of a sample electrochemicalfabrication process that involves the use of two conductive materialsand a dielectric material.

FIG. 24 illustrates a perspective view of a structure that may be formedusing an extension of the process of FIGS. 23( a) and 23(b).

FIGS. 25( a)-25(z) illustrate side views of a sample layer formationprocess according to FIGS. 23( a) and (b) to form a coaxial structurewith a dielectric material that supports only the inner conductor.

FIGS. 26( a)-26(e) illustrate an alternative to the process of FIGS. 25(h)-25(k) when a seed layer is needed prior to depositing the firstconductive material for the fourth layer of the structure.

FIG. 27 depicts a perspective view of a coaxial transmission line.

FIG. 28 depicts a perspective view of an RF contact switch.

FIG. 29 depicts a perspective view of a log-periodic antenna.

FIGS. 30( a) and 30(b) depict perspective views of a sample toroidalinductor rotated by about 180 degrees with respect to one another. FIG.30( c) depicts a perspective view of toroidal inductor formed accordingto an electrochemical fabrication process.

FIGS. 31( a) and 31(b) depict perspective views of a spiral inductordesign and a stacked spiral inductor formed according to anelectrochemical fabrication process.

FIG. 31( c) depicts a variation of the inductors of FIGS. 31( a) and31(b).

FIGS. 32( a) and 32(b) contrast two possible designs where the design ofFIG. 32( b) may offer less ohmic resistance than that of FIG. 32( a)along with a possible change in total inductance.

FIGS. 33( a) and 33(b) depict a schematic representation of twoalternative inductor configurations that minimize ohmic losses whilemaintaining a high level of coupling between the coils of the inductor.

FIG. 34 depicts a perspective view of a capacitor.

FIGS. 35( a) and 35(b) depict a perspective view and a side view,respectively, of an example of a variable capacitor 1102.

FIGS. 36( a)-36(b) depict end views of two example coaxial structureswhere the central conductors are provided with a cross-sectionalconfiguration that increases their surface area relative to theircross-sectional area.

FIG. 37 depicts a side view of an integrated circuit with connectionpads that are used for connecting internal signals (e.g. clock signals)to low dispersions transmission lines for communication with otherportions of the integrated circuit.

FIGS. 38( a) and 38(b) illustrate first and second generation computercontrolled electrochemical fabrication systems (i.e. EFAB™Microfabrication systems) that may be used in implementing the processesset forth herein.

DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION

A basic process of electrochemically forming layers of multilayerthree-dimensional structures was presented in FIGS. 1( a)-1(c), whileFIGS. 2( a)-2(f) applied the layer forming technique to a plurality ofoverlaid layers (i.e. face-to-face contacting of layers regardless ofwhether successive layers are formed above, below, or beside previouslyformed layers). Various possible apparatus components were discussedwith the aid of FIGS. 3( a)-3(c). This apparatus and these processes maybe used in forming structures according to some embodiments of theinvention. Other apparatus and processes may also be used.

For example, in some embodiments process variations may be used to yieldcavities within the conductive structures that are filled completely orpartially with a dielectric material, a conductive material embedded ina dielectric, or a magnetic material (e.g. a powdered ferrite materialembedded in a dielectric binder or sintered after placement). Thedielectric material(s) may be used as support structures to holdconducting elements separate from one another and/or they may be used tomodify the microwave transmission or absorption properties of particulardevices. A dielectric may be incorporated into the structures during alayer-by-layer buildup of the structures or may be back-filled in bulkor selectively into the structures after all layers have been formed.

As a further example, in other embodiments, it may be desirable to havea structure composed of more than one conductive material (e.g. nickeland gold or copper and gold) and as such the process variations may beimplemented to accomplish this result.

Some preferred embodiments of the invention provide microminiature RF ormicrowave transmission lines. Such transmission lines may be used asbuilding blocks for RF and microwave components. A preferredtransmission line has a rectangular coaxial structure that includes arectangular solid-metal center conductor and a solid metal outerconductor. When used herein, a microminiature coaxial component or lineshall mean a component having a minimum cross-sectional dimension fromone inside wall of the outer conductor to the opposite inside wall ofthe outer conductor is less than about 200 μm. Coaxial transmission lineis well suited to such microminiaturization because it supports atransverse electromagnetic (TEM) fundamental mode. From fundamentalelectromagnetic theory, a TEM mode is known to have a zero cut-offfrequency. So the TEM mode continues to propagate at any practicalfrequency no matter how small the dimensions of the structure.

Three benefits of microminiaturized coaxial line are size, microwavebandwidth, and phase linearity. In general, the physical length ofpassive transmission-line components must be of the order of onefree-space wavelength at the operating frequency which is, for example,30 cm at 1 GHz. With conventional coaxial transmission line orwaveguide, this results in a component having a linear dimension of thisorder. With microminiature coaxial line, the component can be made muchshorter by wrapping the line back and forth in a serpentine fashion andeven by stacking the multiple serpentine levels of the line.

A second benefit of microminiature coax is excellent bandwidthperformance. In any coaxial transmission line this is defined maximallyby the cut-on frequency of the first higher-order mode, which is usuallya transverse-electric (TE) mode. From fundamental electromagnetics, itis known that this cut-on frequency scales inversely with the largestdimension of the outer conductor. In conventional coax this cut-ongenerally occurs between 10 and 50 GHz. In microminiature coax thiscut-on can easily be extended to well above 100 GHz, giving it thebandwidth to handle the highest frequencies in near-term analog systemsand the sharpest pulses in digital systems.

A third benefit of microminiature coax is its degree of phase linearity.From fundamental electromagnetics, it is known that the TEM mode is theonly mode on a transmission line that can propagate with zerodispersion. In other words, all frequencies within the operationalbandwidth have the same phase velocity, so the dependence of relativephase between two arbitrary points on the line is perfectly linear withfrequency. Because of this property, sharp non-sinusoidal features, suchas sharp digital edges or short digital pulses propagate withoutdistortion. All of the other known transmission line media at the sizescale of microminiature coax (i.e., less than 200 μm) do not propagate apure TEM mode but rather a quasi-TEM mode. A good example is the stripline commonly used in Si digital ICs or the microstrip commonly used inGaAs or InP MMICs (monolithic microwave integrated circuits).

Beside the dimension, another feature of some preferred microminiaturecoaxial lines is their rectangular shape cross-sectional shape.Conventional coaxial lines are generally made of circular center andouter conductors because of the relative simplicity in fabricating acircular shape (e.g., round wire) for the center conductor and a hollowtube (e.g., catheter) as the outer conductor. Fundamentalelectromagnetic theory shows that rectangular coax can provide verysimilar performance to circular coax, although analytic methods ofdesign are lacking. Fortunately, numerical tools (e.g., high-frequencystructure simulator, or HFSS, software) are now readily available whichcan aid in the design of components such as rectangular microminiaturecoax of any shape or size.

In some preferred embodiments microminiature coaxial line is used inproducing ultra-compact microwave components by, at least in part,utilization of the electrochemical fabrication techniques andparticularly electrochemical fabrications techniques using conformablecontact masks. There is an entire family of passive microwave functionsthat can not be realized in semiconductor ICs, or that can be realizedonly with a significant penalty in performance. A good example of afunction that can not be realized on a semiconductor IC iscirculation—i.e., the nonreciprocal transmission of microwave powerbetween neighboring ports around a loop. An example of a function withinferior IC performance is frequency multiplexing—i.e., the routing ofmicrowave power from one input port into a number of different outputports depending on frequency. Microminiature coaxial lines may be usedin forming components that can provide such functionality particularlywhen combined with the versatility of electrochemical fabricationprocesses.

In some preferred embodiments, microminiature coaxial line is integratedwith active semiconductor devices, particularly RF and high-speeddigital ICs. Such integration addresses a growing problem in the ICindustry which is the interconnecting and routing of high-frequencyanalog and digital signals within chips. A good example of where suchintegration would be useful is in clock distribution in high speedmicroprocessors. Transmission of very sharp edges down conventional(stripline) transmission lines on Si invariably distorts, or spreadsout, the edge because of dispersion and losses on the line. Withmicrominiature coaxial lines, the clock signal could be coupledimmediately into a single-mode coaxial structure in which thefundamental and all Fourier components of the clock pulse wouldpropagate for long distances with the same velocity. As such, the clockpulse distortion, and associated clock skew, could be mitigated.

FIGS. 4( a)-4(c) illustrate an RF/microwave filter 102 of an embodimentof the present invention. FIG. 4( a) depicts a perspective view of acoaxial filter element including a first set 104 of spokes 104 a-104 d.FIG. 4( b) depicts a plan view of filter 102 as viewed from lines4(b)-4(b) of FIG. 4( a). FIG. 4( c) depicts a plan view of the coaxialfilter along lines 4(c)-4(c) of FIG. 4( a). FIG. 4( c) illustrates thatthe filter of FIG. 4( a) includes three sets of spokes spaced apart byone-half (½) of the wavelength (λ_(o)) of an approximately centralfrequency in a band of frequencies that will be passed by the filter. Inthis configuration, the filter may be considered a Bragg-type filterhaving 2 poles (each adjacent pair of sets forming a single pole). Inone example, the filter can take on the dimensions set forth in TABLE 1.

TABLE 1 Reference Dimension Reference Dimension Reference Dimension 122520 μm 124 400 μm 126 520 μm 128 400 μm 130 116 μm 132 116 μm 134 180 μm136 168 μm 138  40 μm 140 168 μm 142  40 μm 144 180 μm 146  60 μm 148 60 μm 150  40 μm 152  40 μm 154  40 μm 156 λ_(o)/2 158 λ_(o)/2

In other embodiments the dimensions may be varied to change theinsertion loss of the filter in the pass band, the attenuation in thestop band, and the characteristics in the transition region. In otherembodiments various parameters may also be modified by varying thematerial or materials from which the filter and/or filter components aremade. For example, the entire filter may be formed from nickel orcopper, or it may be partially or entirely plated with silver or gold.

FIG. 5 depicts a plan view of the central portion of a coaxial filter ofan alternative embodiment where the filter contains five sets of spokes160 a-160 e (two spokes per set are depicted in this view) each spacedat about one-half the central frequency of the pass band (i.e. 162, 164,166, and 168=λ_(o)/2). This figure illustrates a four pole embodiment.

In alternative embodiments other numbers of poles may be used in formingthe filter (e.g. three poles or five or more poles).

FIG. 6( a) depicts end views of a rectangular filter that uses multiplesets of spokes with four spokes per set. In one example, the filter cantake on the dimensions set forth in TABLE 2.

TABLE 2 Reference Dimension Reference Dimension Reference Dimension 222920 μm 224 800 μm 226 320 μm 228 200 μm 230 316 μm 232  59 μm 234  80 μm236  88 μm 238  40 μm 240 168 μm 242  76 μm 244 362 μm 246  60 μm 248 60 μm

As with the square coaxial filter of FIGS. 4( a)-4(c), the dimensionsset forth above for the rectangular coaxial filter may be varied. In themost preferred embodiments of this rectangular filter the sets of spokesare spaced at about λ_(o)/2.

FIGS. 6( b) and 6(c) illustrate examples of two alternativecross-sectional configurations for coaxial filters of the typeillustrated (i.e. a circular configuration and an ellipicalconfiguration, respectively). In other embodiments other cross-sectionalconfigurations are possible and even the cross-sectional configurationsof the inner conductors 302 and 302′ may be different from that of theouter conductors 304 and 304′. In still other embodiments the spokes maytake on different cross-sectional configurations (square, rectangular,circular, elliptical, and the like).

FIGS. 7( a)-7(d) depict examples of alternative spoke configurationsthat may be used in coaxial filters. FIG. 7( a) illustrates anembodiment where only two spokes 312 and 314 are used and extend in thelonger cross-sectional dimension of the rectangular outer conductor 316and maintain the symmetry of the configuration. FIG. 7( b) illustrates asimilar two spoke embodiment to that of FIG. 7( a) with the exceptionthat the spokes 322 and 324 extend in smaller cross-sectional dimensionof the outer conductor 326. FIG. 7( c) illustrates an embodiment wheretwo spokes are still used as in FIGS. 7( a) and 7(b) where one spoke 332extends in the horizontal dimension (i.e. the major dimension of therectangular outer conductor 336) and one spoke 334 extends in thevertical dimension (i.e. the minor dimension of the rectangular outerconductor 336). In FIG. 7( d) only a single spoke 342 makes up each set.

As an example, the embodiment of FIG. 7( a) may take on the dimensionsset forth in TABLE 2 above with the exception of dimensions 242, and 244that do not exist in this configuration. As another example, theembodiment of FIG. 7( a) may take on the dimensions set forth in TABLE 3where the reference numerals have been modified to include apostrophes.

TABLE 3 Reference Dimension Reference Dimension Reference Dimension 222′720 μm 224′ 600 μm 226′ 420 μm 228′ 300 μm 230′ 175 μm 232′  87 μm 234′130 μm 236′ 125 μm 238′  40 μm 240′ 250 μm 246′  60 μm 248′  60 μm

In alternative embodiments, other spoke numbers (e.g. three or five) andconfigurations (e.g. multiple spokes extending from a single side of theconductor, not all spokes extending radically outward from the innerconductor to the outer conductor) may exist.

FIGS. 8( a) and 8(b) illustrate perspective views of non-liner coaxialfilter components according to other embodiments of the invention. FIG.8( a) depicts an extended serpentine shape while FIG. 8( b) depicts aspiraled configuration. In still other alternative embodiments otherconfigurations may be used that take an entry and exit port out of theplane of the winding structure or even cause the winding in general tobe stacked or extend in three-dimensions. Such three dimensionalstacking may lead to more compact filter designs than previouslyobtainable.

FIGS. 9( a)-9(c) depict alternative embodiments of coaxial filtercomponents that use a combination of spokes and either protrusions alongthe inner or outer conductor to aid in filtering RF or microwavesignals. In particular FIG. 9( a) illustrates an embodiment where spokes352, 354, 356, and 358 are included at the end of the outer conductor362 while intermediate to the ends of the outer conductor protrusions372, 374, 376, and 378 are included on the interior surface of the outerconductor and are preferably about one-quarter of the wavelength(λ_(o)/4) in length and spaced by about one-half the wavelength(λ_(o)/2). In alternative embodiments, the recesses in the outerconductor 362 may be considered as opposed to protrusions. In theembodiment of FIG. 9( a) the spokes are not spaced from each other byλ_(o)/2 as in previous embodiments but instead are spaced by an integralmultiple of λ_(o)/2. In the embodiment depicted the integral multiple isthree.

FIG. 9( b) illustrates another alternative embodiment where the spacingbetween spokes are a non unity integral multiple of λ_(o)/2 and at theintermediate λ_(o)/2 positions protrusions 382, 384, 386, and 388 (oflength approximating λ_(o)/2) are included on the inner conductor 392.

FIG. 9( c) illustrates a third alternative embodiment where not only areprotrusions included on the inner conductor but an additionalintermediate set of spokes 394 and 396 is also included. The mostpreferred spacing between each successive set of filter elements remainsapproximately λ_(o)/2.

In further embodiments other configurations of spokes, protrusions,and/or indentations are possible. In some embodiments, it may beacceptable to space the successive filter elements (e.g. spokes,protrusions, and/or indentations) at integral multiples of λ_(o)/2.

In the embodiments of FIGS. 4( a)-9(d), the spokes provided in thestructures may provide sufficient support for the inner conductor suchthat no dielectric or other support medium is needed. As such, in themost preferred embodiments the inner conductor is separated from theouter conductor by an air gap or other gaseous medium or by an evacuatedspace. In other embodiments a solid or even liquid dielectric materialmay be inserted partially within or completely within the gap betweenthe inner and outer conductors. The insertion of the dielectric mayoccur after formation of the conductors or may be formed in situ withthe formation of the conductors. Various example implementationprocesses will be discussed hereafter.

FIG. 9( d) depicts a plan view of the central portion, along the length,of a serpentine-shaped two pole coaxial filter. In this embodiment nospokes are used but only protrusions 394, 396, and 398 on the innerconductor 392′ are used to provide the filtering effect. In alternativeembodiments protrusions on the inside of portion of the outer conductor362′ may be used or a combination of protrusions on the inside andoutside conductor may be used. As no spokes are used, the innerconductor's position is not fixed relative to the outer conductor.Various embodiments will be discussed hereafter that will allow for theformation of a dielectric between the inner and outer conductors duringbuild up of the conductive materials. Various other embodiments willalso be discussed that allow for the transition from a conductivesupport used during layer-by-layer build up to a complete or partialformation of a solid dielectric in between the inner and outerconductors.

FIGS. 10( a)-10(d) depict plan views of the central portion, along thelength of coaxial elements that include sharp transitions in directionof radiation propagation. According to the production methods of thepresent invention miter bends of varying degrees can be inserted intocoaxial components as well as waveguide components with little concernfor the geometric complexity of the design or for the accessibility oftooling to reach the locations to be mitered. FIG. 10( a) depictstransitions from one coaxial segment 402 to another coaxial segment 404and then again to another coaxial segment. In this Figure thetransitions 412, 414, 416, 418, 422, 424, 426, and 428 are shown as 90°transitions and it is anticipated that significant reflection couldresult from these sharp turns. FIG. 10( b) illustrates the use ofmitered facets 432 and 434 at transitions 412″′ and 414″′ to help reducethe losses (e.g. reflections). FIG. 10( c) depicts mitered facets forall transitions 412′, 414′, 416′, 418′, 422′, 424′, 426′, and 428′ whichare believed to help further reduce losses. In still further embodimentsthe facet length can be extended (e.g. the lengths of the facets at 412and 414) to ensure that a larger portion of the impinging radiationstrikes with a non-90°incident angle. FIG. 10( d) illustrates thatmultiple facets may be applied to each transition region 412″, 414″,416″, 418″, 422″, 424″, 426″, and 428″. The mitering effects accordingto the present production methods are not only applicable to coaxialcomponents (e.g. transmission lines, filters, and the like) but are alsoapplicable to waveguides (e.g. waveguides with internal dimensions under800 μm, under 400 μm, or even with smaller dimensions, or largerwaveguides where propagation paths are complex and monolithic structuresare desired to reduce size and or assembly difficulties).

FIGS. 11( a) and 11(b) depict, respectively, plan views along thecentral portions of a coaxial transmission line 438 and a coaxial filtercomponent 440 where perturbations 436 are included on the inside surfaceof the smaller radius side of the coaxial line. The perturbations may besmooth and wave-like or they may be of a more discontinuousconfiguration. It is intended that the perturbations increase the pathlength along the side having the smaller nominal radius such that thepath length is closer to that of the path length along the outer wallthen it would be if the surface having the smaller nominal radius were asimple curve 442. In alternative embodiments the central conductor mayalso be modified with path length perturbations.

FIGS. 12( a)-12(c) depict a coaxial three-pole stub-based filter of analternative embodiment of the invention. FIG. 12( a) depicts a plan view(from the top) of the central portion, along the length of the filter.FIG. 12( b) depicts an end view of the filter of FIG. 12( a)illustrating the rectangular configuration of the structure. FIG. 12( c)depicts a plan view of a circular version of the filter of FIGS. 12( a)and 12(b). In one example, the filter of FIGS. 12( a)-12(c) can take onthe dimensions set forth in TABLE 4.

TABLE 4 Reference Dimension Reference Dimension Reference Dimension 502300 μm 504 300 μm 506  25 μm 508-S0 245 μm 508-S1 165 μm 508-S2  25 μm512 λ_(o)/4 514 λ_(o)/4 516 λ_(o)/4 (250 mm) (250 mm) (250 mm) 522 3.00mm 524 1.64 mm 526 200 μm 528 100 μm

Each pair of stubs 522 and 524 provide a capacitive and an inductivereactance, respectively, whose combination provides a pole of thefilter. Each stub is shorted to the outside conductor 556 at the end ofits side channel 552 and 554 respectively. The spacing between the polespreferably approximates one-quarter of the wavelength (λ_(o)/4) of thecentral frequency of the desired pass band of the filter. The lengths ofthe stubs are selected to provide a capacitive reactance (e.g. somethinglonger than λ_(o)/4) and an inductive reactance (something shorter thanλ_(o)/4). In alternative embodiments it is believed that spacing betweenthe poles may be expanded to an integral multiple of λ_(o)/4, otherfiltering elements may be added into the component (e.g. spokes,protrusions, and the like).

In other embodiments the dimensions may be varied to change theinsertion loss of the filter in the pass band, the attenuation in thestop band, and the characteristics in the transition region as well asin the pass band regions. In this other embodiments various parametersmay also be modified by varying the material or materials from which thefilter and/or filter components are made. For example, the entire filtermay be formed from nickel or copper, or it may be partially or entirelyplated with silver or gold.

In alternative embodiments it may be possible to form each pole from oneshorted stub (providing a shunt inductance) and one open stub (providinga shunt capacitance) that terminates short of the end of the channel(e.g. into a dielectric) wherein the capacitive stub may be able to beshortened due to its open configuration.

FIG. 13 depicts a plan view (from the top) of the central portion, alongthe length of an S-shaped two-pole stub based band pass coaxial filter.Entry port 602 and exit port 604 are connected by a passage 606 in outerconductor 608 from which two pairs of channels 612 and 614 extend. Downthe center of passage 606 an inner conductor 616 extends and from whichtwo pairs of stubs 622 and 624 extend until they short into the outerconductor 608 at the ends of channels 612 and 614 respectively.

FIGS. 14( a) and 14(b) depict perspective views of coaxial filterelements having a modified design that includes openings (e.g. channels)along the length of the outer conductor where the openings are notintended to provide radiation entry or exit ports. In some of theproduction embodiments of the present invention such openings can aid inthe release of a structural material 702 from a sacrificial material 704that may have been deposited within the small cavities and channelswithin the outer conductor. In certain embodiments where chemicaletching of the sacrificial material 704 is to occur, such holes may aidin allowing the etchant to get into the small cavities and channels. Inother embodiments where a sacrificial material is to be separated from astructural material by melting and flowing the opening may not be neededbut if located at selected locations (e.g. near the ends of blindchannels and the like) the openings may allow appropriately suppliedpressure to aid in the removal of the sacrificial material. FIG. 14( a)depicts a perspective view of the component 706 formed from structuralmaterial embedded in and filled by sacrificial material. FIG. 14( b)depicts a perspective view of the component 706 separated from thesacrificial material.

FIGS. 15( a)-15(d) illustrate plots of transmission versus frequencyaccording to mathematical models for various filter designs discussedabove. FIG. 15( a) depicts a modeled transmission plot for a 2 polefilter (three sets of spokes) having a configuration similar to that ofFIG. 7( a) and made from nickel. The dimensions of the component are setforth in Table 5. As can be seen from the FIG. 15( a) the band pass ofthe filter is centered around 28 GHz with an insertion loss of about20-22 dB in the pass band and an insertion loss in the stop band rangingfrom about 61-77 dB.

TABLE 5 Feature Dimension Inside width of the outer conductor 600 μmInside Height of the outer conductor 300 μm Width of the central (i.e.inner) conductor 250 μm Height of the central (i.e. inner) conductor 75μm Height of the horizontally extending spokes 40 μm Thickness (i.e.dimension into the page) of the 100 μm horizontally extending spokesSpacing between successive sets of spokes ~5-5.5 mm

FIG. 15( b) depicts a model transmission plot for a 2 pole filter (threesets of protrusion on the inner conductor) as shown in FIG. 9( d) wherethe length of each protrusion is approximately λ_(o)/4 and thecenter-to-center spacing of the protrusions is approximately λ_(o)/4having a configuration similar to that of FIG. 7( a) and made fromnickel. The inside diameter of the outer conductor is about 240 μm, thediameter of the central conductor transitions between 20 μm and 220 μmwith the protrusions having a length of about 15 mm and acenter-to-center spacing of about 30 mm. From FIG. 15( b) the band passis centered around 5 GHz with an insertion loss of 5-6 dB and aninsertion loss in the stop band of about 13-18 dB.

FIGS. 15( c) and 15(d) depict model transmission plots for filtersconfigured according to structures and dimensions for FIGS. 12( a)-12(c)where the structural material is nickel for FIG. 15( c) and is goldplated nickel for FIG. 15( d). FIG. 15( c) indicates an insertion losson the order of 7-8 dB in the band pass region while FIG. 15( d)indicates a corresponding 1-2 dB insertion loss.

FIG. 16 provides a flow chart of an electrochemical fabrication processthat builds up three-dimensional structures from a single conductivematerial and a single dielectric material that are deposited on alayer-by-layer basis.

The process of FIG. 16 begins with block 702 where a current layernumber, n is set to a value of 1. The formation of the structure/devicewill begin with layer 1 and end with a final layer, N.

After setting the current layer number, the process moves forward todecision block 704 where an inquiry is made as to whether or not thesurface of the substrate is entirely conductive or at least sufficientlyconductive to allow electrodeposition of a conductive material indesired regions of the substrate. If material is only going to bedeposited in a region of the substrate that is both conductive and hascontinuity with a portion of the substrate that receives electricalpower, it may not be necessary for the entire surface of the substrateto be conductive. In the present embodiment, the term substrate isintended to refer to the base on which a layer of material will bedeposited. As the process moves forward the substrate is modified andadded to by the successive deposition of each new layer.

If the answer to the inquiry is “yes”, the process moves forward toblock 708, but if the answer is “no” the process first moves to block706 which calls for the application of a seed layer of a firstconductive material on to the substrate. The application of the seedlayer may occur in many different ways. The application of the seedlayer may be done in a selective manner (e.g. by first masking thesubstrate and then applying the seed layer and thereafter removing themask and any material that was deposited thereon) or in a bulk orblanket manner. A conductive layer may be deposited, for example, by aphysical or chemical vapor deposition process. Alternatively it may takethe form of a paste or other flowable material that can be solidified orotherwise bonded to the substrate. In a further alternative it may besupplied in the form of a sheet that is adhered or otherwise bonded tothe substrate. The seed layer is typically very thin compared to thethickness of electrodeposition that will be used in forming the bulk ofa layer of the structure.

After application of the seed layer, the process moves forward to block708 which calls for the deposition of a second conductive material. Themost preferred deposition process is a selective process that uses adielectric CC mask that is contacted to the substrate through which oneor more openings exist and through which openings the conductivematerial can be electrodeposited on to the substrate (e.g. byelectroplating). Other forms of forming a net selective deposit ofmaterial may also be used. In various alternatives of the process, thefirst and second conductive materials may be different or they may bethe same material. If they are the same the structure formed may havemore isotropic electrical properties, whereas if they are different aselective removal operation may be used to separate exposed regions ofthe first material without damaging the second material.

The process then moves forward to block 710 which calls for removing theportion of the seed layer that is not covered by the just depositedconductive material. This is done in preparation for depositing thedielectric material. In some embodiments, it may be unnecessary toremove the seed layer in regions where it overlays the conductivematerial deposited on an immediately preceding layer but for simplicityin some circumstances a bulk removal process may still be preferred. Theseed layer may be removed by an etching operation that is selective tothe seed layer material (if it is different from the second conductivematerial). In such an etching operation, as the seed layer is very thin,as long as reasonable etching control is used, little or no damageshould result to the seed layer material that is overlaid by the secondconductive material. If the seed layer material (i.e. the firstconductive material) is the same as the second conductive material,controlled etching parameters (e.g. time, temperature, and/orconcentration of etching solution) should allow the very thin seed layerto be removed without doing any significant damage to the just depositedsecond conductive material.

Next the process moves forward to block 712 which calls for thedeposition of a dielectric material. The deposition of the dielectricmaterial may occur in a variety of ways and it may occur in a selectivemanner or in a blanket or bulk manner. As the process of the presentembodiment forms planarized composite layers that include distinctregions of conductive material and distinct regions of the dielectricmaterial, and as any excess material will be planed away, it does noharm (other than that associated with potential waste) to blanketdeposit the dielectric material and in fact will tend to offer broaderdeposition possibilities. The deposition of the dielectric material mayoccur by spraying, sputtering, spreading, jetting or the like.

Next, the process proceeds to block 714 which calls for planarization ofthe deposited material to yield an nth layer of the structure havingdesired net thickness. Planarization may occur in various mannersincluding lapping and/or CMP.

After completion of the layer by the operation of block 714, the processproceeds to decision block 716. This decision block inquires as towhether the nth layer (i.e. the current layer is the last layer of thestructure (i.e. the Nth layer), if so the process moves to block 720 andends, but if not, the process moves to block 718.

Block 718 increments the value of “n”, after which the process loopsback to block 704 which again inquires as to whether or not thesubstrate (i.e. the previous substrate with the addition of the justformed layer) is sufficiently conductive.

The process continues to loop through blocks 704-718 until the formationof the Nth layer is completed.

FIG. 17( a) depicts an end view of a coaxial structure 722 that includesan outer conductive element 724, and inner conductive element 726, anembedded dielectric region 728 and an external dielectric region 730. Insome embodiments that extend the process of FIG. 16, it may be possibleto use post-process (i.e. process that occur after the deposition of alllayers) operations to remove a portion or all of the dielectric fromregion 730 and a portion or all of the dielectric from region 728 underthe assumption that such removal from region 728 would be done in suchaway as to ensure adequate support for the inner conductive element 726.

FIGS. 18( a)-18(j) illustrate application of the process flow of FIG. 16to form a structure similar to that depicted in FIGS. 17( a) and 17(b).FIGS. 18( a)-18(j) depict vertical plan views displaying a cross-sectionof the structure as it is being built up layer-by-layer. FIG. 18( a)depicts the starting material of the process (i.e. a blank substrate 732onto which layers will be deposited). FIG. 18( b) depicts the resultingselectively deposited second conductive material 734-1′ for the firstlayer. In beginning this process it was assumed that the suppliedsubstrate was sufficiently conductive to allow deposition without theneed for application of a seed layer. FIG. 18( c) illustrates the resultof a blanket deposition of the dielectric material 736-1′ (according tooperation/block 712) while FIG. 18( d) illustrates the formation of thecompleted first layer L1 as a result of the planarization operation ofoperation/block 714. The first completed layer has a desired thicknessand distinct regions of conductive material 734-1 and dielectricmaterial 736-1.

FIG. 18( e) illustrates the result of the initial operation (block 706)associated with the formation of the second layer. The application of aseed layer 738-2′ was necessary for the second layer as a significantportion of the first layer is formed of a dielectric material andfurthermore the center conductive region is isolated from the two outerconductive regions. FIG. 18( f) illustrates the result of the selectivedeposition of the second conductive material 734-2′ (operation 708) forthe second layer and further illustrates that some portions 738-2″ ofthe seed layer 738-2′ are not covered by the second conductive material734-2′, while FIG. 18( g) illustrates the result of the removal of theuncovered portions of the seed layer 738-2′(operation 710) which yieldsthe net seed layer for the second layer 738-2. FIG. 18( h) illustratesthe result of the blanket deposition of the dielectric material 736-2′for the second layer (operation 712). FIG. 18( i) illustrates thecompleted second layer L2 that results from the planarization process(operation 714) and that includes distinct regions of conductivematerial 734-2 and dielectric material 736-2.

FIG. 18( j) illustrates the formation of the completed structure fromlayers L1-L7. The operations for forming layers L3-L7 are similar tothose used during the formation of L2. The structure device of FIG. 18(j) may be put to use or it may undergo additional processing operationsto prepare it for its ultimate use.

Various alternatives to the embodiment of FIG. 16 are possible. In onealternative, the order of deposition could be reversed. In anotherprocess instead of depositing material selectively, each material may bedeposited in bulk, and selective etching operations used to yield the“net” selective locating of materials.

FIG. 19 provides a flow chart of an electrochemical fabrication processthat is somewhat more complex than the process of FIG. 16. The processof FIG. 19 builds up three-dimensional structures/devices using threeconductive materials that are deposited on a layer-by-layer basis. Asall materials in this process are conductors with the possible exceptionof the initial substrate, a simplification of the layer formationprocess results as compared to the process of FIG. 16. However, as threematerials may or may not be deposited on each layer, this process addsnot only complexity of the process but also can yield structures ofenhanced functionality and versatility.

The process starts with block 802 where a current layer number is set toone (n=1). The process then moves to decision block 804 where theinquiry is made as to whether the surface of the substrate is entirelyor at least sufficiently conductive. If the answer to this inquiry is“yes” the process moves forward to block 808. On the other hand if theanswer is “no”, the process moves to block 806 which calls for theapplication of a seed layer of a conductive material on to thesubstrate. The process then loops to decision block 808.

In block 808, the inquiry is made as to whether or not a firstconductive material will be deposited on the nth layer (i.e. on thecurrent layer). If the answer to this inquiry is “no” the process movesforward to block 812. On the other hand if the answer is “yes”, theprocess moves to block 810 which calls for the selective deposition ofthe first conductive material. The process then loops to decision block812.

In block 812, the inquiry is made as to whether or not a secondconductive material will be deposited on the nth layer (i.e. on thecurrent layer). If the answer to this inquiry is “no” the process movesforward to block 816. On the other hand if the answer is “yes”, theprocess moves to block 814 which calls for the deposition of the secondconductive material (which may be done selectively or in bulk). Theprocess then loops to decision block 816.

In block 816, the inquiry is made as to whether or not a thirdconductive material will be deposited on the nth layer (i.e. on thecurrent layer). If the answer to this inquiry is “no” the process movesforward to block 828. On the other hand if the answer is “yes”, theprocess moves to decision block 818.

In block 818 the inquiry is made as to whether or not a secondconductive material was deposited on the nth layer (i.e. on the currentlayer). If the answer to this inquiry is “no” the process moves forwardto block 826. On the other hand if the answer is “yes”, the processmoves to block 822 which calls for the planarization of the partiallyformed layer at a desired level which may cause an interim thickness ofthe layer to be slightly more than the ultimate desired layer thicknessfor the final layer. The process then moves to block 824 which calls forselectively etching into the deposited material(s) to form one or morevoids into which the third material will be deposited. The process thencompletes the loop to block 826.

Block 826 calls for the deposition of the third conductive material. Thedeposition of the third conductive material may occur selectively or inbulk. The process then loops to block 828.

Block 828 calls for planarization of the deposited materials to obtain afinal smoothed nth layer of desired thickness.

After completion of the formation of the nth layer by the operation ofblock 828, the process proceeds to decision block 830. This decisionblock inquires as to whether the nth layer (i.e. the current layer) isthe last layer of the structure (i.e. the Nth layer), if so the processmoves to block 834 and ends, but if not, the process loops to block 832.

Block 832 increments the value of “n”, after which the process loopsback to block 808 which again inquires as to whether or not a firstconductive material is to be deposited on the nth layer. The processthen continues to loop through blocks 808-832 until the formation of theNth layer is completed.

FIGS. 20( a) and 20(b) depict perspective views of structures thatinclude conductive elements and dielectric support structures that maybe formed in part according to the process of FIG. 19. The coaxialstructure/device of FIG. 20( a) includes an outer conductor 842, aninner conductor 844, and dielectric support structures 846 that hold thetwo conductors in desired relative positions. During formation, theinner and outer conductors are formed from one of the three conductivematerials discussed in relation to the process of FIG. 19 (a primarymaterial) and the outer conductor is formed not only with entry and exitports 848 and 850 but also with processing ports 852. Within some ofthese processing ports a secondary conductive material is located andwhich is made to contact the inner conductor 844. In the remainder ofthe build volume a tertiary conductive material is located. Afterformation of all layers of the structure, the secondary conductivematerial is removed and a dielectric material 846 is made to fill thecreated void or voids. Thereafter, the tertiary conductive material isremoved leaving the hollowed out structure/device of FIG. 20( a). Itshould be understood that in the discussion of FIG. 20( a), thereferences to the primary, secondary, and tertiary materials docorrelate one-to-one with the first, second, and third conductivematerials of the process of FIG. 19 but not necessarily respectively.

FIG. 20( b) depicts a similar structure to that of FIG. 20( a) with theexception that the inner conductor and outer conductor positions aremore firmly held into position by modified dielectric structures 846′.

FIGS. 21( a)-21(t) illustrate application of the process flow of FIG. 19to form a coaxial structure similar to that depicted in FIG. 20( a)where two of the conductive materials are sacrificial materials that areremoved after formation of the layers of the structure and wherein adielectric material is used to replace one of the removed sacrificialmaterials.

FIG. 21( a) depicts the starting material of the process (i.e. a blanksubstrate 852 onto which layers will be deposited). In moving throughthe process, it is assumed that the supplied substrate was sufficientlyconductive to allow deposition without the need for application of aseed layer (i.e. the answer to the inquiry of 804 was “yes”) and thatthe answer to the inquiry of 808 was also “yes”. FIG. 21( b) depicts theresult of the operation of block 819 related to the deposit of the firstconductive material 854 for producing an initial deposition 854-1′ forthe first layer. Next, it is assumed the answer to the inquiry of block812 is “yes” for the first layer. It is also assumed for the first layerthat the answer to the inquiry of block 816 is “no”. As such FIG. 21( c)illustrates the combined deposition of the second material 856 (block810) and the planarization of the deposited first and second conductivematerials 854-1 and 856-1 (block 828) to complete the formation of thefirst layer L1. FIGS. 21( d) and 21(e) represent the same processes andoperations as were applied to the formation of the first layer forformation of the second layer L2 which is composed of distinct regions854-2 and 856-2 of first and second conductive materials. FIGS. 21( t)and 21(g) represent the same processes and operations as were applied tothe formation of the first and second layers for formation of the thirdlayer L3 which is composed of distinct regions 854-3 and 856-3 of firstand second conductive materials.

FIGS. 21( h)-21(k) illustrate the results of some of the operationsassociated with forming the fourth layer L4 of the structure/device.FIG. 21( h) depicts the result of the operation of block 810 related tothe deposit of the first conductive material 854 for producing aninitial deposition 854-4″ for the fourth layer. Next, it is assumed theanswer to the inquiry of block 812 is “yes” for the fourth layer. It isalso assumed for the fourth layer that the answer to the inquiry ofblock 816 is “yes”. As such, FIG. 21( i) illustrates the combineddeposition of the second material 856 (block 810) and the planarizationof the deposited first and second conductive materials 854-4′ and 856-4′(block 822) to form a smooth but only partially formed fourth layer.FIG. 21( j) illustrates the result of operation 824 in etching away aportion of the planed deposit 856-4′. FIG. 21( k) illustrates thecombined results of operations 826 and 828 to yield the completed fourthlayer L4 which is composed of distinct regions 854-4 and 856-4, and858-4 of first conductive material 854, the second conductive material856, and the third conductive material 858.

FIGS. 21( l) and 21(m), FIGS. 21( n) and 21(o), and 21(p) and 21(q)represent the same processes and operations as were applied to theformation of the first three layers for formation of the fifth throughseventh layers (L5, L6, and L7) which are composed respectively ofdistinct regions 854-5 and 856-5, 854-6 and 856-6, and 854-7 and 856-7of first and second conductive materials.

FIGS. 21( r)-21(t) represent an extension of the process flow of FIG.19. FIG. 21( r) represents the result of the selective removal (e.g. byetching or melting) of the third conductive material to form a void 866that extends through an outer wall 862 of first conductive material tocontact an isolated interior structure 864 of the second conductivematerial (e.g. the inner conductor of a coaxial transmission line). FIG.21( s) depicts the structure of FIG. 21( r) with the void 866 filled bya selected dielectric material 860 which contacts both the outer wall862 and the interior structure 864. FIG. 21( t) depicts the structure ofFIG. 21( s) with the first conductive material removed to yield a finalsubstantially air filled structure with the interior structure 864supported relative to the outer wall by one or more dielectricstructures. FIG. 21( t) also depicts an opening in the structure.

FIGS. 22( a)-22(c) depict application of the first removal, backfilling, and second removal operations to the opposite materials asillustrated in FIGS. 21( r)-21(t). In FIGS. 22( a)-22(c) the firstconductive material 854 is removed to create a void, the void is filledwith a dielectric 860′, and then the third conductive material isremoved.

In alternative embodiments, the processes of FIGS. 21( r)-21(t) and22(a)-22(c) can be extended to include a second filling operation tofill the void that results from the final removal operation. The secondfilling operation may use the same or a different dielectric than wasoriginally used. In still further alternatives more than threeconductive materials may be used such that the resultingstructure/device is comprised of two or more conductive materials,and/or is accompanied by two, three or more solid, liquid, or gaseousdielectrics.

FIGS. 23( a) and 23(b) provide a flow chart of an electrochemicalfabrication process that builds up three-dimensional structures/devicesusing two conductive materials and one dielectric material.

The process of FIGS. 23( a) and 23(b) begins at block 902 with thesetting of three process variables: (1) the layer number is set to one,n=1, (2) a primary seed layer parameter is set to zero, PSLP=0, and (3)a second seed layer parameter is set to zero, SSLP=0. The process thenproceeds to decision block 904 where the inquiry is made as to whetherthe surface of the substrate is entirely or at least sufficientlyconductive? If “yes” the process proceeds to decision block 906 and if“no” the process proceeds to block 908.

In blocks 906 and 908, the same inquiry is made as to whether a firstconductive material (FCM) will be deposited on the nth layer (i.e. thefirst layer). If the answer to the inquiry of block 906 is “yes”, theprocess proceeds to block 914 and if it is “no”, the process proceeds toblock 916. If the answer to the inquiry of block 908 is “yes”, theprocess proceeds to block 910 and if it is “no”, the process proceeds toblock 916.

Block 910 calls for application of a primary seed layer (PSL) of aconductive material on to the substrate. This seed layer may be appliedin a variety of ways some of which have been discussed previouslyherein. From Block 910 the process proceeds to block 912 where theprimary seed layer parameter is set to one, PSLP=1, which indicates thata primary seed layer has been deposited on the current layer.

From block 912 and from a “yes” answer from block 906 the processproceeds to block 914 which calls for the selectively deposition of theFCM. In some alternatives, the preferential deposition is via a CC mask.From block 914, from a “no” answer in block 908, and from a “no” answerin block 906 the process proceeds to decision block 916.

In decision block 916 an inquiry is made as to whether a secondconductive material (SCM) will be deposited on the nth layer (i.e. thefirst layer in this case). If the answer to the inquiry of block 916 is“yes”, the process proceeds to block 924 and if it is “no”, the processproceeds to block 918.

In blocks 924 and 918, the same inquiry is made as to whether a primaryseed layer has been deposited on the first layer (i.e. Does PSLP=1?). Ifthe answer to the inquiry of block 924 is “yes”, the process proceeds toblock 926 and if it is “no”, the process proceeds to block 934. If theanswer to the inquiry of block 918 is “yes”, the process proceeds toblock 922 and if it is “no”, the process proceeds to block 966.

In decision block 926 an inquiry is made as to whether the existence ofthe PSL is compatible with an SCM that will be deposited. If the answerto the inquiry of block 924 is “yes”, the process proceeds to block 928and if it is “no”, the process proceeds to block 932.

Blocks 932 and 922 call for the removal of any portion of the PSL thatis not covered by the FCM. From block 932 the process proceeds to block934, as did a “no” response in block 924, and from block 922 the processproceeds to block 966. In decision block 934 an inquiry is made as towhether the surface of the substrate is entirely or sufficientlyconductive. Though this question was asked previously, the answer mayhave changed due to a different pattern of conductive material to bedeposited or due to the removal of a previously supplied seed layerbecause it is incompatible with the second conductive material that isto be deposited. If the answer to the inquiry of block 934 is “yes”, theprocess proceeds to block 928 and if it is “no”, the process proceeds toblock 936.

Block 936 calls for application of a secondary seed layer (SSL) whichwill allow a second conductive material to be deposited in a subsequentoperation. After which the process proceeds to block 938 where SSLP isset to one, thereby indicating that the present layer received thesecondary seed layer which information will be useful in subsequentoperations.

Block 928 is reached by a “yes” response to either of block 926 or 934,or via block 938. Block 928 calls for the deposition of the secondconductive material (SCM). This deposition operation may be a selectiveoperation or a blanket operation.

From block 928 the process proceeds to decision block 942 where aninquiry is made as to whether a dielectric will be deposited on the nthlayer (i.e. the first layer). If the answer to the inquiry of block 942is “yes”, the process proceeds to block 944 and if it is “no”, theprocess proceeds to block 968.

Block 944 calls for planarizing the deposited materials to obtain apartially formed nth layer having a desired thickness which may bedifferent from the final thickness of the layer. After planarization theprocess proceeds to block 946 which calls for the selectively etchinginto one or both of the deposited conductive materials to form one ormore voids into which the dielectric may be located after which theprocess proceeds to block 948. If the answer to the inquiry of block 948is “yes”, the process proceeds to block 952 and if it is “no”, theprocess proceeds to block 956.

Decision block 952 inquires as whether the etching of block 946 resultedin the removal of all exposed SSL? If the answer to the inquiry of block952 is “yes”, the process proceeds to block 956 and if it is “no”, theprocess proceeds to block 954.

Block 954 calls for the removal of the portion of the SSL that isexposed by the voids formed in block 946. After the operation of block954, the process proceeds to decision block 956.

Decision block 956 inquires as whether PSLP is equal to one. If theanswer to the inquiry of block 956 is “yes”, the process proceeds todecision block 962 and if it is “no”, the process proceeds to block 966.

Decision block 962 inquires as to whether the etching of the SCM removedall the exposed PSL. If the answer to the inquiry of block 956 is “yes”,the process proceeds to decision block 966 and if it is “no”, theprocess proceeds to block 964.

Block 964 calls for the removal of the portion of the PSL that isexposed by the voids created in block 946. After the operation of block964 the process proceeds to block 966.

Block 966 calls for the deposition of the dielectric material. Thedeposition process may be selective or of a blanket nature and variousprocesses are possible some of which were discussed elsewhere herein.

Block 968 calls for planarization of the deposited materials to obtain afinal smoothed nth layer of desired thickness.

After completion of the formation of the nth layer by the operation ofblock 968, the process proceeds to decision block 970 where PSLP andSSLP are both set to zero, after which the process proceeds to decisionblock 972. This decision block inquires as to whether the nth layer(i.e. the current layer) is the last layer of the structure (i.e. theNth layer), if so the process moves to block 978 and ends, but if not,the process proceeds to block 974.

Block 974 increments the value of “n”, after which the process loopsback to block 904 which again inquires as to whether or not surface ofthe substrate (i.e. the substrate surface as modified by the formationof the immediately preceding layer) is sufficiently conductive. Theprocess then continues to loop through blocks 904-974 until theformation of the Nth layer is completed.

As with the processes of FIGS. 16 and 19, various alternatives to theprocess of FIGS. 23( a) and 23(b) exist. These variations may involvechanging the order of the material depositions as a whole or changingthe order of the operations for performing each type of materialdeposition based on what other operations have occurred or will occurduring the formation of a given layer. Additional materials of theconductive or dielectric type may be added. Ultimate selectivity of anydeposition may occur by depositing material in voids, by actual controlof the deposition locations, or by etching away material afterdeposition. Additional operations may be added to the process to removeselected materials or to deposit additional materials.

FIG. 24 depicts a perspective view of a coaxial structure that includesouter and inner conductive elements 1002 and 1004, respectively, madefrom material 994 and a dielectric support structure 1006 made from amaterial 996. The structure of FIG. 24 may be formed according to theprocess of FIGS. 23( a) and 23(b) with the addition of a post layerformation operation that removes one of the conductive materials. Duringlayer-by-layer build up of the structure, the inner and outer conductorsare formed from one of the two conductive materials discussed inrelation to the process of FIGS. 23( a) and 23(b) (i.e. a primarymaterial). A secondary conductive material is used as a sacrificialmaterial. A dielectric material (i.e. a tertiary material) is also usedas part of the structure. After formation of all layers of thestructure, the secondary conductive material is removed to yield thefinal structure comprised of the primary conductive material 994 and thedielectric material 996.

FIGS. 25( a)-25(z) illustrate side views of the results of variousoperations of FIGS. 23( a) and (b) that are used in forming layers ofthe sample coaxial component illustrated in FIG. 24. The operationsassociated with the results illustrated in FIGS. 25( a)-25(x) and26(a)-26(f) are set forth in the TABLE 6.

TABLE 6 FIGS. “25” FIGS. “26” Layers “L” Operation Comments25(a),(c),(e),(i),(p),(v) 1,2,3,4,6,7 914 The 1^(st) material 992 isdeposited 26(c) 25(b),(d),(f),(x) 1,2,6,7 936 & 968 The 2^(nd) material994 is deposited 26(f) and planarized to complete formation of the layer25(f),(k),(r) 3,4,6 928 & 944 The 2^(nd) material 994 is deposited — andplanarized to form an incomplete layer 25(g),(l),(s) 3,4,6 946 Thedeposited material is etched — to form voids 990 25(h),(n),(u) 3,4,6 966& 968 The 3^(rd) material 996 is deposited — and planarized to completeformation of the layer 25(j),(q),(w) 4,6,7 936 A secondary seed layer1000 is 26(e) applied — A primary seed layer 998 is 26(b) applied25(m),(t) 4,6 Exposed portions of the secondary — seed layer are removed— Exposed portions of the primary 26(d) seed layer are removed (o) 5 Alloperations performed for layer — 4

FIG. 25( y) illustrates an overview of the completed structure with thepresence of the layer delimiters removed and the under the assumptionthat the second seed layer material was identical to the secondmaterial. FIG. 25( z) illustrates the result of a post process 1^(st)material removal operation (e.g. selective etching) that yields thestructure illustrated in FIG. 24.

FIGS. 26( a)-26(e) illustrate an alternative to the process of FIGS. 25(h)-25(k) when use of the primary seed layer is needed prior todepositing the first conductive material for the fourth layer of thestructure.

FIG. 27 depicts a perspective view of a coaxial transmission line. Thecoaxial transmission line 1002 includes an outer conductive shield 1006surrounding an inner conductor 1004. In the illustrated embodiment, thetransmission line 1002 may be set away from a substrate 1008 by a spacer1010. In the illustrated embodiment the substrate may be a dielectricwith an appropriate ground potential being applied to the shield 1006via conductive spacer 1010 (e.g. via the underside of the substrate)while a signal may be applied to the central conductor (e.g. via anappropriate connection from the underside of the substrate). Inalternative embodiments, the shielding may curve around the bend in thecentral conductor such that the shield provides substantially completeshielding of the central conductor at substantially all of its locationsabove the substrate (except for maybe one or more openings in the shieldthat allows removal of a sacrificial material that may have been usedduring device formation. In other alternative embodiments, the substratemay be conductive with a dielectric material providing isolation werethe central conductor and the interior portion of the coaxial elementpenetrates the substrate. In still other embodiments, the shielding maytake the forms of a conductive mesh or even one or more conductive linesthat extend out of the plane of the substrate. In still otherembodiments, the transmission line may be curved in a single plane (e.g.a plane parallel to that of the substrate) or it may take on any desiredthree-dimensional pattern. For example, the transmission line may take aspiraling pattern much like that of a spiral loop of a conductive wire.Similarly, a filter element like those shown in FIGS. 12( c) and 13 havebe converted from the relatively planar configurations shown to a morethree dimensional shape where, for example, the main line of the filter(616, 606) takes form of spiral while branches 622, 614, and the like,either take a path down the center of the spiral or take spiral paththemselves (e.g. a smaller diameter path than that taken by the mainline). Such a configuration can reduce the planar size of the structureat the cost of increasing its height while still maintaining a desiredeffective length.

FIG. 28 depicts a perspective view of an RF contact switch. The RFswitch is a cantilever switch. The switch 1022 includes a cantileverbeam 1026 which contacts a second beam 1024. The cantilever beamdeflects downwards due to electrostatic forces when a voltage is appliedbetween the underlying control electrode 1028. In the illustratedembodiment, all of the switch elements are suspended above the substratewith by pedestals 1030 a-1030(c), which, it is believed, will result ina reduction of parasitic capacitance to the substrate. This approachmakes it possible to decrease the distance between the drive electrodeand the cantilever beam, which increases actuation force whiledecreasing the required drive voltage, and at the same time allowsincreased distance from the substrate, thereby reducing parasitics. Thisindependence of the electrode size and contact gaps is not possible ifboth must lie on a planar substrate. The flexibility of the multilevelembodiments of electrochemical fabrication makes it possible to placethe switch components in more optimal locations. In one embodiment, thelong cantilever beam may have a length of about 600 μm and a thicknessof 8 μm. A circular contact pad may be located underneath the beam suchthat the contacts are separated by, for example about 32 μm for highisolation. The lower beam may be suspended, for example, at about 32 μm,above the substrate while the upper beam may be about 88 μm above thesubstrate. Of course in other embodiments other dimensionalrelationships may exist. In one example of the use of such a switch, avoltage may be applied between control electrode 1028 and cantilever1026 to close the switch while an AC signal (e.g. an RF or microwavesignal) exists on either the cantilever or the other beam and is capableof propagating once the switch is closed. In some alternative designs,one or both of lines 1026 and 1024 may include protrusions at theircontact locations or alternatively the contract locations may be made ofan appropriate material to enhance contact longevity. In still otheralternative designs, the entire switch may be located within a shieldingconductor which might reduce any radiative losses associated with signalpropagation along the lengths of lines 1024 and 1026. In still furtherembodiments, the switch may be used as a capacitive switch by locating athin layer of dielectric (e.g. nitride) at the contact location of oneor both of lines 1024 and 1026 thereby allowing the switch to move thecontacts between low and high capacitance values. Signal passage mayoccur for such a switch when impedance matching occurs (e.g. whencapacitance is low higher frequency signals may pass while lowerfrequency signals may be blocked or significantly attenuated. In stillfurther embodiments control electrode or the nearest portion of line1026, thereto, may be coated with a dielectric to reduce the possibilityof a short occurring between the control electrode and the deflectableline. In still other embodiments, a pull up electrode may be included tosupplement separation of the contacts beyond what is possible with thespring force of the deflectable line 1026 alone. In some embodiments theratio of switch capacitance (assuming it to be a capacitive switch) whenopen to closed, is preferably greater than about 50 and more preferablygreater than about 100. In still other embodiments, a secondaryconductor may be attached to and separated from the pedestal 1030(c) andthe underside of line 1026 by a dielectric. This secondary conductor maybe part of the switch control circuitry as opposed to having the controlcircuitry share conductor 1026 with the signal.

FIG. 29 depicts a perspective view of a log-periodic antenna. Theantenna 1032 includes a number of different dipole lengths1034(a)-1034(j) along a common feedline 1036 that is supported from asubstrate (not shown) by spacer 1038). It is believed that this elevatedposition may reduce parasitic capacitive losses that may otherwise beassociated with the antenna contacting or being in proximity to a lossysubstrate. In other embodiments, other antenna configurations may beused, such as for example, linear slot arrays, linear dipole arrays,helix antennas, spiral antennas, and/or horn antennas.

FIGS. 30( a)-30(b) depict perspective views of a sample toroidalinductor design rotated by about 180 degrees with respect to oneanother. FIG. 30( c) depicts a perspective view of the toroidal inductorof FIGS. 30( a) and 30(b) as formed according to an electrochemicalfabrication process. The toroidal inductor of FIG. 20( c) was formedaccording to the process of FIGS. 2( a)-2(f). In some embodiments theinductor may be formed on a dielectric substrate while in otherembodiments the inductor may be formed on a conductive substrate withappropriate dielectrically isolated feedthroughs. In one specificembodiment, the toroidal coil may include 12 windings, be about 900 μmacross, and have its lower surface suspended about 40 μm above thesubstrate. The inductor 1042 includes a plurality of inner conductivecolumns 1044 and a plurality of outer conductive columns 1046 connectedby upper bridging elements and lower bridging elements 1050(a) and1050(b). The inductor also includes two circuit connecting elements1048(a) and 1048(b) that are supported by spacers 1052(a) and 1052(b).In some embodiments, the entire inductor may be supported by and spacedfrom a substrate by the spacers 1052(a) and 1052(b). It is believed thatsuch spacing may reduce parasitic capacitance that might otherwiseresult from contact between or proximity of the lower conductive bridges1050(b) and a substrate (not shown). Though in some embodiments, theinner and outer conductive columns may have similar dimensions, in theillustrated embodiment, the area of each of the inner conductive columnsis smaller than the area of the outer conductive columns (e.g. thediameter is smaller). Similarly, in the present embodiment the width ofthe conductive bridges 1050(a) and 1050(b) also increase radiallyoutward from the center of the inductor. It is believed that such aconfiguration will result in reduced ohmic resistance has a desiredcurrent travels around the inductive path. It is also believed that sucha configuration may lead to reduced leakage of magnetic flux from theinductor and thus contribute to an enhancement in inductance or areduction in noise that the component may radiate to other circuitelements. In still further embodiments, it may be advantageous to shieldthe outer circumference of the inductor by a conductive wall. Similarlythe inner circumference may also be shielded by a conductive wall, andin still further embodiments the upper surface and potentially even thelower surface may also be shielded by conductive plates or meshes. Insome alternative embodiments the spacers 1052(a) and 1052(b) and eventhe circuit connecting elements 1048(a) and 1048(b) may be shielded, atleast in part, by conductive elements which may help minimize radiativelosses. In further embodiments loops of the inductor may take on a morecircular shape as opposed to the substantially rectangular shapeillustrated.

FIGS. 31( a)-31(b) depict perspective views of a spiral inductor designand a stacked spiral inductor formed according to an electrochemicalfabrication process, respectively. The illustrated inductor 1062includes eight coils 1064(a)-1064(g), one connecting bridge 1066, andtwo spacers 1068(a) and 1068(b). In one detailed embodiment, the coilsmay be about 8 μm thick each, they may have an outer diameter of about200 μm, they may be separated by about 8 μm, and the bottom coil may beelevated about 56 μm above the substrate. As with the illustratedembodiments of FIGS. 27-30( c), the spacers are used not only forestablishing an electrical connection between the inductor and the restof the circuit but also to space the inductor coils from a substrate(not shown).

FIG. 31( c) depicts a variation of the inductors of FIGS. 31( a) and31(b). The inductor 1072 of FIG. 31( c) may be formed with the indicateddesign features using 23 layers. As depicted, the inductor includes 11coil levels 1074(a)-1074(k) and 9 and ⅛ turns. Each coil level is formedfrom an 8 micron thick layer and is separated from other coil levels bygaps of 4 micron thickness. The inner diameter is 180 microns and outeris 300 micron. As illustrated the inductor includes a core which is 60micron in diameter with a 60 micron space between the core 1076 andwindings 1074(a)-1074(k). A simple calculation based on a uniformmagnetic field yields an inductance of 20 nH for the inductor when thecore is disregarded. However since the real inductor has a diameterlarger than its length, and the windings are not particularly tight, theinductance will be lower than this theoretical value. The real value isestimated to be in the range of 25%-50% of the theoretical value, (i.e.about 5-10 nH). On the other hand, the inductance may be greatlyenhanced by the presence of the core 1076 (e.g. by a factor of 100 ormore). Of course, in other embodiments, other configurations arepossible.

In other embodiments, the inductors of FIGS. 31( a)-31(c) may take ondifferent forms. FIGS. 32( a) and 32(b) contrast two possible designswhere the design of FIG. 32( b) may offer less ohmic resistance thanthat of FIG. 32( a) along with a possible change in total inductance. Asingle inductor 1082 having N coils and a relative long connector line1084 is illustrated in FIG. 32( a) while FIG. 32( b) depicts two halfsized inductors 1086(a) and 1086(b) where the number of coils in each isconsidered to be about one-half of those in the inductor of FIG. 32( a)connected in series via short bridging element 1088. As illustratedsince bridging element 1088 is shorter than connector line 1084, it isbelieved that the inductor pair of FIG. 32( b) will have less loss thanthat of FIG. 32( a). On the other hand as the coupling between the twoinductors is probably reduced, there is probably an associated loss ofnet inductance. By inclusion of a core that extends in the form of aloop through both inductors it may be possible to bring the inductanceback up to or even beyond that of the taller inductor of FIG. 32( a).

FIGS. 33( a) and 33(b) depict a schematic representation of twoalternative inductor configurations that minimize ohmic losses whilemaintaining a high level of coupling between the coils of the inductor.In the figures the upward path of the coils is depicted with a solidline while the downward path of the coils is depicted with a dashedline. In FIG. 33( a) the upward extending coils have a larger perimeterthan the downward extending coils. In FIG. 33( b) they are ofsubstantially similar perimeter dimensions.

FIG. 34 depicts a perspective view of a capacitor 1092 including 12interdigitated plates (two sets 1094(a) and 1094(b) of six plates each).In a detailed embodiment each plate may have an eight micron thickness,a 4 micron gap between each plate, and each plate may be 436 μm on aside. Based on these details, the capacitance is calculated at about 5pF based on an ideal parallel plate calculation. It is anticipated thatthe value will be somewhat different due to fringe field effects. Asillustrated, the capacitor is surrounded by a dam 1096 which may be usedto facilitate a post-release dielectric backfill while minimizingdielectric spill over to adjacent devices that may be produced nearby onthe same substrate. Backfilling with a dielectric could dramaticallyincrease the capacitance offered by such capacitors. Similarlydecreasing the separation between plates and or adding additional platesmay also significantly increase the capacitance. The capacitor is shownwith two pairs of orthogonally located bond pads 1098(a) and 1098(b),respectively. As the parallel bond pads are conductively connected,electrical connection to the device may occurred via connection to oneof the 1098(a) pads and one of the 1098(b) pads. As illustrated the bondpads are in line with the lowest plates of the capacitor and the upperplates are connected to the lowest plates by columns located in theextended regions from each group. In other embodiments, the pads couldconnect more directly to, for example, the mid-level plates of eachstack. The current flow could from there proceed both upward anddownward to the other plates of each stack respectively.

FIGS. 35( a) and 35(b) depict a perspective view and a side view,respectively, of an example of a variable capacitor 1102. The capacitorplates have a similar configuration to that of FIG. 34 and are againdivided into two sets of six plates 1104(a) and 1104(b). In thisembodiment one set of capacitor plates 1104(a) is attached to springelements 1106 and to two sets of parallel plate electrostatic actuators1108 that can drive plates 1104(a) vertically relative to fixed plates1104(b). In use a DC potential may be applied between spring supports1110 and actuator pads 1112. Actuator pads 1112 connect to columns 1114which in turn hold fixed drive plates 1116. When such a drive voltage isapplied moveable drive plates 1118 are pulled closer to fixed driveplates which in turn pull moveable capacitor plates 1104(a) closer tofixed capacitor plates 1104(b) via support columns 1124 and therebychange the capacitance of the device. Capacitor plates 1104(b) are heldin position by support columns 1126. The capacitor may be connected in acircuit via spring support 1110 and one of fixed capacitor plate contactpads 1128.

In still further embodiments, resistive losses associated with currentcarrying conductors such as the spacers of FIGS. 27-31( c), with centralconductors of coaxial components, and with elements of various othercomponents may be reduced by increasing the surface area of the elementswithout necessarily increasing their cross-sectional dimensions. It isbelieved that this can be particularly useful when the frequency of thesignal makes the skin depth small compared to the cross-sectionaldimensions of the components. For example, a cross-sectional dimensionof a current carrying conductor (in a plane perpendicular to thedirection of current flow) could be increased by changing it from acircular shape to a square shape or other shape containing a pluralityof angles. Two further examples of such coaxial elements are shown inFIGS. 36( a) and 36(b) wherein coaxial elements 1132 and 1142,respectively include central conductors 1134 and 1144 which have beenmodified from a square and circular configuration to modifiedconfigurations with indentations so as to increase their surface areas.

FIG. 37 depicts a side view of another embodiment of the presentinvention where an integrated circuit 1152 is formed on a substrate 1154(e.g. silicon) with contact pads 1156 exposed through a protective layer1158 located on the top of the integrated circuit. The contact pads maybe pads for connection to other devices or alternatively may be pads fortop side intra-connection for linking separate parts of the integratedcircuit. For example, the intraconnects (and inter-connects) may be padsfor distributing high frequency clock signals (e.g. 10 GHz) to differentlocations within the integrated circuit via a low dispersiontransmission line such as a coaxial capable or waveguide. Two coaxialtransmission lines 1162 and 1172 are illustrated as connecting some ofthe pads to one another. The outer conductors of the coaxial lines aresupported by stands or pedestals 1164 and 1174 and the connections tothe pads are made by wires 1166 and 1176. In alternative embodiments theconnections to the pads may be made by not only the wires but also bybring at least a portion of the coaxial shielding in contact with orinto closer proximity with the surface of the integrated circuit. Insome embodiments, the coaxial structures may be supported by the centralwires and any grounding connections only while in other embodimentspedestals or the like may be used. In some implementations coaxialstructures may be preformed and picked and placed at desired locationson the integrated circuits or alternatively the EFAB process may beperformed directly onto the upper surface of the integrated circuit.Some implementations of such microdevice to IC integration are set forthin U.S. Provisional Patent Application No. 60/379,133 which is describedbriefly hereafter and is incorporated herein in its entirety. Of coursein other embodiments some pads may be for connection between componentsof the IC while some other pads may be for connections to othercomponents.

FIGS. 38( a) and 38(b) illustrate first and second generation computercontrolled electrochemical fabrication systems (i.e. EFAB™Microfabrication systems) produced by MEMGen. These systems may be usedin implementing the processes set forth herein and in formingdevices/structures set forth herein. As presently configured thesesystems include selective deposition and blanket deposition stations, aplanarization station, various cleaning and surface activation stations,inspection stations, plating bath circulation subsystems, atmospherecontrol systems (e.g. temperature control and air filtering system), anda transport stage for moving the substrate relative to the variousstations (i.e. for providing Z, X, and Y motion). Other systems mayinclude one or more selective etching stations, one or more blanketetching stations, one or more seed layer formation stations (e.g. CVD orPVD deposition stations), selective atmosphere control systems (e.g. forsupplying specified gases globally or within certain work areas), andmaybe even one or more rotational stages for aligning the substrateand/or selected stations.

In some embodiments, it is possible to build a number of similarcomponents on a single substrate where the multiple components may beused together on the substrate or they may be diced from one another andapplied to separate secondary substrates as separate components for useon different circuit/component boards. In other embodiments theelectrochemical processes of various embodiments set forth herein may beused in a generic way to form various distinct components simultaneouslyon a single substrate where the components may be formed in their finalpositions and with many if not all of their desired interconnections. Insome embodiments single or multiple identical or distinct components maybe formed directly onto integrated control circuits or other substratesthat include premounted components. In some embodiments, it may bepossible to form entire systems from a plurality of monolithicallyformed and positioned components.

In still further embodiments, the devices or groups of devices may beformed along with structures that may be used for packaging thecomponents. Such packaging structures are set forth in U.S. PatentApplication No. 60/379,182 which is described in the table of patentapplication set forth hereafter. This incorporated application teachesseveral techniques for forming structures and hermetically sealablepackages. Structures may be formed with holes that allow removal of asacrificial material. After removal of the sacrificial material, theholes may be filled in a variety of ways. For example, adjacent to or inproximity to the holes a meltable material may be located which may bemade to flow and seal the holes and then resolidify. In otherembodiments the holes may be plugged by locating a plugging material inproximity to but spaced from the openings and after removal ofsacrificial material then causing the plugging material to bridge thegaps associated with the holes and seal them either via a solder likematerial or other adhesive type material. In still other embodiments, itmay be possible to perform a deposition to fill the holes, particularlyif such a deposition is essentially a straight line deposition processand if underneath the holes a structural element is located that can actas a deposition stop and build up point from which the deposit can buildup to plug the holes.

Though the application has focused the bulk of its teachings on coaxialtransmission lines and coaxial filters, it should be understood thatthese structures may be used as fundamental building blocks of otherstructures. As such, RF and microwave components of various embodimentsmay include one or more of a microminiature coaxial component, atransmission line, a low pass filter, a high pass filter, a band passfilter, a reflection-based filter, an absorption-based filter, a leakywall filter, a delay line, an impedance matching structure forconnecting other functional components, one of a class of antennas, adirectional coupler, a power combiner (e.g., Wilkinson), a powersplitter, a hybrid combiner, a magic TEE, a frequency multiplexer, or afrequency demultiplexer. The antennas include pyramidal (i.e., smoothwall) and scalar (corrugated wall) feedhorns—components that canefficiently transfer microwave power from the microminiaturetransmission line into free space. EFAB produced microminiature coaxwill also enable new components with multiple functionalities. Thecombination of power combining (or splitting) and frequency multiplexing(or demultiplexing) could readily be combined in a singlemicrominiature-coax structure having multiple input and output ports.

Other embodiments of the present invention may involve the formation anduse of waveguides and waveguide components. Some embodiments may involvethe formation of discrete components that may be combined manually orautomatically while may involve the formation of entire systems such assignal distribution networks and the like.

The patent applications in the following table are hereby incorporatedby reference herein as if set forth in full. The gist of each patentapplication is included in the table to aid the reader in findingspecific types of teachings. It is not intended that the incorporationof subject matter be limited to those topics specifically indicated, butinstead the incorporation is to include all subject matter found inthese applications. The teachings in these incorporated applications canbe combined with the teachings of the instant application in many ways.For example, the various apparatus configurations disclosed in thesereferenced applications may be used in conjunction with the novelfeatures of the instant invention to provide various alternativeapparatus that include the functionality disclosed herein:

U.S. Application No. Title Filing Date Brief Description U.S. App. No.09/488,142 Method for Electrochemical Fabrication Jan. 20, 2000 Thisapplication is a divisional of the application that led to the abovenoted '630 patent. This application describes the basics of conformablecontact mask plating and electrochemical fabrication including variousalternative methods and apparatus for practicing EFAB as well as variousmethods and apparatus for constructing conformable contact masks U.S.App. No. 09/755,985 Microcombustor and Combustion-Based ThermoelectricMicrogenerator Jan. 5, 2001 Describes a generally toroidal counterflowheat exchanger and electric current microgenerator that can be formedusing electrochemical fabrication. U.S. App. No. 60/379,136 SelectiveElectrochemical Deposition Methods Having Enhanced Uniform May 7, 2002Deposition Capabilities Describes conformable contact mask processes forforming selective depositions of copper using a copper pyrophosphateplating solution that allows simultaneous deposition to at least onelarge area (greater than about 1.44 mm²) and at least one small area(smaller than about 0.05 mm²) wherein the thickness of deposition to thesmaller area is no less than one-half the deposition thickness to thelarge area when the deposition to the large area is no less than about10 μm in thickness and where the copper pyrophosphate solution containsat least 30 g/L of copper. The conformable contact mask process isparticularly focused on an electrochemical fabrication process forproducing three-dimensional structures from a plurality of adheredlayers. U.S. App. No. 60/379,131 Selective Electrodeposition UsingConformable Contact Masks Having May 7, 2002 Enhanced LongevityDescribes conformable contact masks that include a support structure anda patterned elastomeric material and treating the support structure witha corrosion inhibitor prior to combining the support and the patternedelastomeric material to improve the useful life of the mask. Alsodescribes operating the plating bath at a low temperature so as toextend the life of the mask. U.S. App. No. 60/379,132 Methods andApparatus for Monitoring Deposition Quality During May 7, 2002Conformable Contact Mask Plating Operations Describes an electrochemicalfabrication process and apparatus that includes monitoring of at leastone electrical parameter (e.g. voltage) during selective depositionusing conformable contact masks where the monitored parameter is used tohelp determine the quality of the deposition that was made. If themonitored parameter indicates that a problem occurred with thedeposition, various remedial operations are undertaken to allowsuccessful formation of the structure to be completed. U.S. App. No.60/329,654 “Innovative Low-Cost Manufacturing Technology for High AspectRatio Oct. 15, 2001 Microelectromechanical Systems (MEMS)” A conformablecontact masking technique where the depth of deposition is enhanced bypulling the mask away from the substrate as deposition is occurring insuch away that the seal between the conformable portion of the mask andthe substrate shifts from the face of the conformal material and theopposing face of the substrate to the inside edges of the conformablematerial and the deposited material. U.S. App. No. 60/379,129Conformable Contact Masking Methods and Apparatus Utilizing In Situ May7, 2002 Cathodic Activation of a Substrate An electrochemicalfabrication process benefiting from an in situ cathodic activation ofnickel is provided where prior to nickel deposition, the substrate isexposed to the desired nickel plating solution and a current less thanthat capable of causing deposition is applied through the platingsolution to the substrate (i.e. cathode) to cause activation of thesubstrate, after which, without removing the substrate from the platingbath, the current is increased to a level which causes deposition tooccur. U.S. App. No. 60/379,134 Electrochemical Fabrication Methods WithEnhanced Post Deposition May 7, 2002 Processing An electrochemicalfabrication process for producing three- dimensional structures from aplurality of adhered layers is provided where each layer includes atleast one structural material (e.g. nickel) and at least one sacrificialmaterial (i.e. copper) that will be etched away from the structuralmaterial after the formation of all layers have been completed. A copperetchant containing chlorite (e.g. Enthone C-38) is combined with acorrosion inhibitor (e.g. sodium nitrate) to prevent pitting of thestructural material during removal of the sacrificial material. U.S.App. No. 60/364,261 Electrochemical Fabrication Method and Apparatus forProducing Three- Mar. 13, 2002 Dimensional Structures Having ImprovedSurface Finish An electrochemical fabrication (EFAB) process andapparatus are provided that remove material deposited on at least onelayer using a first removal process that includes one or more operationshaving one or more parameters, and remove material deposited on at leastone different layer using a second removal process that includes one ormore operations having one or more parameters, wherein the first removalprocess differs from the second removal process by inclusion of at leastone different operation or at least one different parameter. U.S. App.No. 60/379,133 Method of and Apparatus for Forming Three-DimensionalStructures Integral May 7, 2002 With Semiconductor Based Circuitry Anelectrochemical fabrication (e.g. by EFAB ™) process and apparatus areprovided that can form three-dimensional multi-layer structures usingsemiconductor based circuitry as a substrate. Electrically functionalportions of the structure are formed from structural material (e.g.nickel) that adheres to contact pads of the circuit. Aluminum contactpads and silicon structures are protected from copper diffusion damageby application of appropriate barrier layers. In some embodiments,nickel is applied to the aluminum contact pad via solder bump formationtechniques using electroless nickel plating. U.S. App. No. 60/379,176Selective Electrochemical Deposition Methods Using Pyrophosphate CopperMay 7, 2002 Plating Baths Containing Citrate Salts An electrochemicalfabrication (e.g. by EFAB ™) process and apparatus are provided that canform three -dimensional multi-layer structures using pyrophosphatecopper plating solutions that contain a citrate salt. In preferredembodiments the citrate salts are provided in concentrations that yieldimproved anode dissolution, reduced formation of pinholes on the surfaceof deposits, reduced likelihood of shorting between anode and cathodeduring deposition processes, and reduced plating voltage throughout theperiod of deposition. A preferred citrate salt is ammonium citrate inconcentrations ranging from somewhat more that about 10 g/L for 10mA/cm² current density to as high as 200 g/L or more for a currentdensity as high as 40 mA/cm². U.S. App. No. 60/379,135 Methods of andApparatus for Molding Structures Using Sacrificial Metal May 7, 2002Patterns Molded structures, methods of and apparatus for producing themolded structures are provided. At least a portion of the surfacefeatures for the molds are formed from multilayer electrochemicallyfabricated structures (e.g. fabricated by the EFAB ™ formation process),and typically contain features having resolutions within the 1 to 100 μmrange. The layered structure is combined with other mold components, asnecessary, and a molding material is injected into the mold andhardened. The layered structure is removed (e.g. by etching) along withany other mold components to yield the molded article. In someembodiments portions of the layered structure remain in the moldedarticle and in other embodiments an additional molding material is addedafter a partial or complete removal of the layered structure. U.S. App.No. 60/379,177 Electrochemically Fabricated Structures Having DielectricBases and May 7, 2002 Methods of and Apparatus br Producing SuchStructures Multilayer structures are electrochemically fabricated (e.g.by EFAB ™) on a temporary conductive substrate and are there after arebonded to a permanent dielectric substrate and removed from thetemporary substrate. The structures are formed from top layer to bottomlayer, such that the bottom layer of the structure becomes adhered tothe permanent substrate. The permanent substrate may be a solid sheetthat is bonded (e.g. by an adhesive) to the layered structure or thepermanent substrate may be a flowable material that is solidifiedadjacent to or partially surrounding a portion of the structure withbonding occurs during solidification. The multilayer structure may bereleased from a sacrificial material prior to attaching the permanentsubstrate or more preferably it may be released after attachment. U.S.App. No. 60/379,182 Electrochemically Fabricated Hermetically SealedMicrostructures and May 7, 2002 Methods of and Apparatus for ProducingSuch Structures Multilayer structures are electrochemically fabricated(e.g. by EFAB ™) from at least one structural material (e.g. nickel), atleast one sacrificial material (e.g. copper), and at least one sealingmaterial (e.g. solder). The layered structure is made to have a desiredconfiguration which is at least partially and immediately surrounded bysacrificial material which is in turn surrounded almost entirely bystructural material. The surrounding structural material includesopenings in the surface through which etchant can attack and removetrapped sacrificial material found within. Sealing material is locatednear the openings. After removal of the sacrificial material, the box isevacuated or filled with a desired gas or liquid. Thereafter, thesealing material is made to flow, seal the openings, and resolidify.U.S. App. No. TBD Electrochemically Fabricated Hermetically SealedMicrostructures and Dkt No. P-U.S.021-B-MG Methods of and Apparatus forProducing Such Structures Dec. 3, 2002. Multilayer structures areelectrochemically fabricated (e.g. by EFAB ™) from at least onestructural material (e.g. nickel), at least one sacrificial material(e.g. copper), and at least one sealing material (e.g. solder). Thelayered structure is made to have a desired configuration which is atleast partially and immediately surrounded by sacrificial material whichis in turn surrounded almost entirely by structural material. Thesurrounding structural material includes openings in the surface throughwhich etchant can attack and remove trapped sacrificial material foundwithin. Sealing material is located near the openings. After removal ofthe sacrificial material, the box is evacuated or filled with a desiredgas or liquid. Thereafter, the sealing material is made to flow, sealthe openings, and resolidify. U.S. App. No. 60/379,184 Multistep ReleaseMethod for Electrochemically Fabricated Structures May 7, 2002Multilayer structures are electrochemically fabricated (e.g. by EFAB ™)from at least one structural material (e.g. nickel), that is configuredto define a desired structure and which may be attached to a supportstructure, and at least a first sacrificial material (e.g. copper) thatsurrounds the desired structure, and at least one more material whichsurrounds the first sacrificial material and which will function as asecond sacrificial material. The second sacrificial material is removedby an etchant and/or process that does not attack the first sacrificialmaterial. Intermediate post processing activities may occur, and thenthe first sacrificial material is removed by an etchant or process thatdoes not attack the at least one structural material to complete therelease of the desired structure. U.S. App. No. 60/392531 Miniature RFand Microwave Components and Methods for Fabricating Such Jun. 27, 2002Components RF and microwave radiation directing or controllingcomponents are provided that are monolithic, that are formed from aplurality of electrodeposition operations, that are formed from aplurality of deposited layers of material, that include inductive andcapacitive stubs or spokes that short a central conductor of a coaxialcomponent to the an outer conductor of the component, that includenon-radiation-entry and non-radiation-exit channels that are useful inseparating sacrificial materials from structural materials and that areuseful, and/or that include surface ripples on the inside surfaces ofsome radiation flow passages. Preferred formation processes useelectrochemical fabrication techniques (e.g. including selectivedepositions, bulk depositions, etching operations and planarizationoperations) and post- deposition processes (e.g. selective etchingoperations and/or back filling operations). U.S. App. No. 60/415,374Monolithic Structures Including Alignment and/or Retention Fixtures Oct.1, 2002 for Accepting Components Permanent or temporary alignment and/orretention structures for receiving multiple components are provided. Thestructures are preferably formed monolithically via a plurality ofdeposition operations (e.g. electrodeposition operations). Thestructures typically include two or more positioning fixtures thatcontrol or aid in the positioning of components relative to one another,such features may include (1) positioning guides or stops that fix or atleast partially limit the positioning of components in one or moreorientations or directions, (2) retention elements that hold positionedcomponents in desired orientations or locations, and (3) positioningand/or retention elements that receive and hold adjustment modules intowhich components can be fixed and which in turn can be used for fineadjustments of position and/or orientation of the components. U.S. App.No. 10/271,574 Methods of and Apparatus for Making High Aspect RatioOct. 15, 2002 Microelectromechanical Structures Various embodiments ofthe invention present techniques for forming structures (e.g. HARMS-typestructures) via an electrochemical extrusion (ELEX ™) process. Preferredembodiments perform the extrusion processes via depositions throughanodeless conformable contact masks that are initially pressed againstsubstrates that are then progressively pulled away or separated as thedepositions thicken. A pattern of deposition may vary over the course ofdeposition by including more complex relative motion between the maskand the substrate elements. Such complex motion may include rotationalcomponents or translational motions having components that are notparallel to an axis of separation. More complex structures may be formedby combining the ELEX ™ process with the selective deposition, blanketdeposition, planarization, etching, and multi-layer operations ofEFAB ™. U.S. App. No. 60/422,008 EFAB Methods and Apparatus IncludingSpray Metal Coating Processes Oct. 29, 2002 Various embodiments of theinvention present techniques for forming structures via a combinedelectrochemical fabrication process and a thermal spraying process. In afirst set of embodiments, selective deposition occurs via conformablecontact masking processes and thermal spraying is used in blanketdeposition processes to fill in voids left by selective depositionprocesses. In a second set of embodiments, selective deposition via aconformable contact masking is used to lay down a first material in apattern that is similar to a net pattern that is to be occupied by asprayed metal. In these other embodiments a second material is blanketdeposited to fill in the voids left in the first pattern, the twodepositions are planarized to a common level that may be somewhatgreater than a desired layer thickness, the first material is removed(e.g. by etching), and a third material is sprayed into the voids leftby the etching operation. The resulting depositions in both the firstand second sets of embodiments are planarized to a desired layerthickness in preparation for adding additional layers to formthree-dimensional structures from a plurality of adhered layers. Inother embodiments, additional materials may be used and differentprocesses may be used. U.S. App. No. 60/422,007 Medical Devices and EFABMethods and Apparatus for Producing Them Oct. 29, 2002 Variousembodiments of the invention present miniature medical devices that maybe formed totally or in part using electrochemical fabricationtechniques. Sample medical devices include micro-tweezers or forceps,internally expandable stents, bifurcated or side branch stents, drugeluting stents, micro- valves and pumps, rotary ablation devices,electrical ablation devices (e.g. RF devices), micro-staplers,ultrasound catheters, and fluid filters. In some embodiments devices maybe made out of a metal material while in other embodiments they may bemade from a material (e.g. a polymer) that is molded from anelectrochemically fabricated mold. Structural materials may includegold, platinum, silver, stainless steel, titanium or pyrolytic carbon-coated materials such as nickel, copper, and the like. U.S. App. No.60/422,982 Sensors and Actuators and Methods and Apparatus for ProducingThem Nov. 1, 2002 Various embodiments of the invention present sensorsor actuators that include a plurality of capacitor (i.e. conductive)plates that can interact with one another to change an electricalparameter that may be correlated to a physical parameter such aspressure, movement, temperature, or the like or that may be driven mayan electrical signal to cause physical movement. In some embodiments thesensors or actuators are formed at least in part via electrochemicalfabrication (e.g. EFAB). U.S. App. No. TBD Multi-cell Masks and Methodsand Apparatus for Using Such Masks To Form Dkt No. P-U.S.042-B-MGThree-Dimensional Structures Nov. 26, 2002. Multilayer structures areelectrochemically fabricated via depositions of one or more materials ina plurality of overlaying and adhered layers. Selectivity of depositionis obtained via a multi-cell controllable mask. Alternatively, netselective deposition is obtained via a blanket deposition and aselective removal of material via a multi-cell mask. Individual cells ofthe mask may contain electrodes comprising depositable material orelectrodes capable of receiving etched material from a substrate.Alternatively, individual cells may include passages that allow orinhibit ion flow between a substrate and an external electrode and thatinclude electrodes or other control elements that can be used toselectively allow or inhibit ion flow and thus inhibit significantdeposition or etching. U.S. App. No. TBD Non-Conformable Masks andMethods and Apparatus for Forming Three- Dkt No. P-U.S.043-A-MGDimensional Structures Nov. 26, 2002. Electrochemical Fabrication may beused to form multilayer structures (e.g. devices) from a plurality ofoverlaying and adhered layers. Masks, that are independent of asubstrate to be operated on, are generally used to achieve selectivepatterning. These masks may allow selective deposition of material Ontothe substrate or they may allow selective etching of a substrate whereafter the created voids may be filled with a selected material that maybe planarized to yield in effect a selective deposition of the selectedmaterial The mask may be used in a contact mode or in a proximity mode.In the contact mode the mask and substrate physically mate to formsubstantially independent process pockets. In the proximity mode, themask and substrate are positioned sufficiently close to allow formationof reasonably independent process pockets. In some embodiments, masksmay have conformable contact surfaces (i.e. surfaces with sufficientdeformability that they can substantially conform to surface of thesubstrate to form a seal with it) or they may have semi-rigid or evenrigid surfaces. Post deposition etching operations may be performed toremove flash deposits (thin undesired deposits).

Various other embodiments of the present invention exist. Some of theseembodiments may be based on a combination of the teachings herein withvarious teachings incorporated herein by reference. Some embodiments maynot use any blanket deposition process and/or they may not use aplanarization process. Some embodiments may involve the selectivedeposition of a plurality of different materials on a single layer or ondifferent layers. Some embodiments may use blanket deposition processesthat are not electrodeposition processes. Some embodiments may useselective deposition processes on some layers that are not conformablecontact masking processes and are not even electrodeposition processes.Some embodiments may use the non-conformable contact mask or non-contactmasking techniques set forth in the above referenced U.S. ProvisionalApplication corresponding to P-US042-B-MG.

Some embodiments may use nickel as a structural material while otherembodiments may use different materials such as copper, gold, silver, orany other electrodepositable materials that can be separated from the asacrificial material. Some embodiments may use copper as the structuralmaterial with or without a sacrificial material. Some embodiments mayremove a sacrificial material while other embodiments may not. In someembodiments the sacrificial material may be removed by a chemicaletching operation, an electrochemical operation, or a melting operation.In some embodiments the anode may be different from the conformablecontact mask support and the support may be a porous structure or otherperforated structure. Some embodiments may use multiple conformablecontact masks with different patterns so as to deposit differentselective patterns of material on different layers and/or on differentportions of a single layer. In some embodiments, the depth of depositionwill be enhanced by pulling the conformable contact mask away from thesubstrate as deposition is occurring in a manner that allows the sealbetween the conformable portion of the CC mask and the substrate toshift from the face of the conformal material to the inside edges of theconformable material.

In view of the teachings herein, many further embodiments, alternativesin design and uses of the instant invention will be apparent to those ofskill in the art. As such, it is not intended that the invention belimited to the particular illustrative embodiments, alternatives, anduses described above but instead that it be solely limited by the claimspresented hereafter.

1. A coaxial RF or microwave component that preferentially passes aradiation in a desired frequency band, comprising: a. at least one RF ormicrowave radiation entry port in a conductive structure; b. at leastone RF or microwave radiation exit port in the conductive structure; c.at least one passage, substantially bounded on the sides by theconductive structure, through which RF or microwave radiation passeswhen traveling from the at least one entry port to the at least one exitport; d. a central conductor extending along the at least one passagefrom the entry port to the exit port; and e. at least one conductivespoke extending between the central conductor and the conductivestructure at each of a plurality of locations where successive locationsalong the length of the passage are spaced by approximately one-half ofa propagation wavelength, or an integral multiple thereof, within thepassage for a frequency to be passed by the component, wherein one ormore of the following conditions are met (1) the central conductor, theconductive structure, and the conductive spokes are monolithic, (2) across-sectional dimension of the passage perpendicular to a propagationdirection of the radiation along the passage is less than about 1 mm,more preferably less than about 0.5 mm, and most preferably less thanabout 0.25 mm, (3) more than about 50% of the passage is filled with agaseous medium, more preferably more than about 70% of the passage isfilled with a gaseous medium, and most preferably more than about 90% ofthe passage is filled with a gaseous medium, (4) at least a portion ofthe conductive portions of the component are formed by anelectrodeposition process, (5) at least a portion of the conductiveportions of the component are formed from a plurality of successivelydeposited layers, (6) at least a portion of the passage has a generallyrectangular shape, (7) at least a portion of the central conductor has agenerally rectangular shape, (8) the passage extends along atwo-dimensional non-linear path, (9) the passage extends along athree-dimensional path, (10) the passage comprises at least one curvedregion and a side wall of the passage in the curved region has anominally smaller radius than an opposite side of the passage in thecurved region and is provided with a plurality of surface oscillationshaving smaller radii, (11) the conductive structure is provided withchannels at one or more locations where the electrical field at asurface of the conductive structure, if it were there, would have beenless than about 20% of its maximum value within the passage, morepreferably less than 10% of its maximum value within the passage, evenmore preferably less than 5% of its maximum value within the passage,and most preferably where the electrical field would have beenapproximately zero, (12) the conductive structure is provided withpatches of a different conductive material at one or more locationswhere the electrical field at the surface of the conductive structure,if it were there, would have been less than about 20% of its maximumvalue within the passage more preferably less than about 10% of itsmaximum value within the passage, even more preferably less than about5% of its maximum value within the passage, and most preferably wherethe electrical field would have been approximately zero, (13) miteredcorners are used at least some junctions for segments of the passagethat meet at angles between 60° and 120°, and/or (14) the conductivespokes are spaced at an integral multiple of one-half the wavelength andbulges on the central conductor or bulges extending from the conductivestructure extend into the passage at one or more locations spaced fromthe conductive spokes by an integral multiple of approximately one-halfthe wavelength.
 2. The component of claim 1 wherein condition one (1) ismet and at least one other condition is met.
 3. The component of claim 1wherein condition two (2) is met and at least one other condition ismet.
 4. The component of claim 1 wherein condition three (3) is met andat least one other condition is met.
 5. The component of claim 1 whereincondition four (4) is met and at least one other condition is met. 6.The component of claim 1 wherein condition five (5) is met and at leastone other condition is met.
 7. The component of claim 1 whereincondition six (6) is met and at least one other condition is met.
 8. Thecomponent of claim 1 wherein condition seven (7) is met and at least oneother condition is met.
 9. The component of claim 1 wherein conditioneight (8) is met and at least one other condition is met.
 10. Thecomponent of claim 1 wherein condition nine (9) is met and at least oneother condition is met.
 11. The component of claim 1 wherein conditionten (10) is met and at least one other condition is met.
 12. Thecomponent of claim 1 wherein condition eleven (11) is met and at leastone other condition is met.
 13. The component of claim 1 whereincondition twelve (12) is met and at least one other condition is met.14. The component of claim 1 wherein condition thirteen (13) is met andat least one other condition is met.
 15. The component of claim 1wherein condition fourteen (14) is met and at least one other conditionis met.
 16. The component of claim 1 wherein the conductive structure,the central conductor, or the spokes comprise a metal.
 17. The componentof claim 1 wherein the surface of at least one of the conductivestructure or the central conductor comprises a more conductive metalplated above a less conductive material.
 18. The component of claim 1wherein the passage is substantially filled with a solid dielectricmaterial.
 19. The component of claim 1 wherein the desired frequencyband is centered on a frequency greater than about 2 GHz, morepreferably greater than about 10 GHz, and even more preferably greaterabout 20 GHz.
 20. The component of claim 1 wherein the at least onespoke comprises one of (1) at least three sets of two spokes, morepreferably at least four sets of two spokes, and most preferably atleast five sets of two spokes, or (2) at least three sets of fourspokes, more preferably at least four sets of four spokes, and mostpreferably at least five sets of four spokes.
 21. A coaxial RF ormicrowave component that preferentially passes a radiation in a desiredfrequency band, comprising: a. at least one RF or microwave radiationentry port in a conductive structure; b. at least one RF or microwaveradiation exit port in the conductive structure; c. at least onepassage, substantially bounded on the sides by the conductive structure,through which RF or microwave radiation passes when traveling from theat least one entry port to the at least one exit port; d. a centralconductor extending along the at least one passage from the entry portto the exit port; and e. at a plurality of locations along a length ofthe passage, a pair of conductive stubs extending from approximately thesame position along a length of the passage, one having an inductiveproperty and the other having a capacitive property, each extending intoa closed channel that extends from a side of the passage, wherein thesuccessive locations along the length of the passage are spaced byapproximately one-quarter of a propagation wavelength, or an integralmultiple thereof, within the passage for a frequency to be passed by thecomponent, wherein one or more of the following conditions are met (1)the central conductor, the conductive structure, and the conductivestubs are monolithic, (2) a cross-sectional dimension of the passageperpendicular to a propagation direction of the radiation along thepassage is less than about 1 mm, (3) more than about 50% of the passageis filled with a gaseous medium (4) at least a portion of the conductiveportions of the component are formed by an electrodeposition process,(5) at least a portion of the conductive portions of the component areformed from a plurality of successively deposited layers, (6) thepassage comprises at least one curved region and a side wall of thepassage in the curved region has a nominally smaller radius than anopposite side of the passage in the curved region and is provided with aplurality of surface oscillations having smaller radii, (7) theconductive structure is provided with channels at one or more locationswhere the electrical field at a surface of the conductive structure, ifit were there, would have been less than about 20% of its maximum valuewithin the passage (8) the conductive structure is provided with patchesof a different conductive material at one or more locations where theelectrical field at the surface of the conductive structure, if it werethere, would have been less than about 20% of its maximum value withinthe passage, (9) mitered corners are used at at least some junctions forsegments of the passage that meet at angles between 60° and 120°, and/or(10) the conductive stubs are spaced at an integral multiple ofone-quarter the wavelength and bulges on the central conductor or bulgesextending from the conductive structure extend into the passage at oneor more locations spaced from the conductive stubs by an integralmultiple of approximately one-half the wavelength.
 22. The component ofclaim 21 wherein condition one (1) is met and at least one othercondition is met.
 23. The component of claim 21 wherein condition two(2) is met and at least one other condition is met.
 24. The component ofclaim 21 wherein condition three (3) is met and at least one othercondition is met.
 25. The component of claim 21 wherein condition four(4) is met and at least one other condition is met.
 26. The component ofclaim 21 wherein condition five (5) is met and at least one othercondition is met.
 27. The component of claim 21 wherein at least aportion of the passage has a generally rectangular shape.
 28. Thecomponent of claim 21 wherein at least a portion of the centralconductor has a generally rectangular shape.
 29. The component of claim21 wherein the passage extends along a two-dimensional non-linear path.30. The component of claim 21 wherein the passage extends along athree-dimensional path.
 31. The component of claim 21 wherein conditionsix (6) is met and at least one other condition is met.
 32. Thecomponent of claim 21 wherein condition seven (7) is met and at leastone other condition is met.
 33. The component of claim 21 whereincondition eight (8) is met and at least one other condition is met. 34.The component of claim 21 wherein condition nine (9) is met and at leastone other condition is met.
 35. The component of claim 21 whereincondition ten (10) is met and at least one other condition is met. 36.The component of claim 21 wherein the conductive structure, the centralconductor, or the stubs comprise a metal.
 37. The component of claim 21wherein a cross-sectional dimension of the passage perpendicular to apropagation direction of the radiation along the passage is less thanabout 0.5 mm.
 38. The component of claim 21 wherein more than about 70%of the passage is filled with a gaseous medium.
 39. The component ofclaim 21 wherein the conductive structure is provided with channels atone or more locations where the electrical field at a surface of theconductive structure, if it were there, would have been less than about10% of its maximum value within the passage.
 40. The component of claim21 wherein the conductive structure is provided with patches of adifferent conductive material at one or more locations where theelectrical field at the surface of the conductive structure, if it werethere, would have been less than about 10% of its maximum value withinthe passage.
 41. The component of claim 21 wherein a cross-sectionaldimension of the passage perpendicular to a propagation direction of theradiation along the passage is less than about 0.5 mm.
 42. The componentof claim 21 wherein more than about 70% of the passage is filled with agaseous medium.
 43. The component of claim 21 wherein the conductivestructure is provided with channels at one or more locations where theelectrical field at a surface of the conductive structure, if it werethere, would have been less than about 10% of its maximum value withinthe passage.
 44. The component of claim 21 wherein the conductivestructure is provided with patches of a different conductive material atone or more locations where the electrical field at the surface of theconductive structure, if it were there, would have been less than about10% of its maximum value within the passage.
 45. A coaxial RF ormicrowave component that preferentially passes a radiation in a desiredfrequency band, comprising: a. at least one RF or microwave radiationentry port in a conductive structure; b. at least one RF or microwaveradiation exit port in the conductive structure; c. at least onepassage, substantially bounded on the sides by the conductive structure,through which RF or microwave radiation passes when traveling from theat least one entry port to the at least one exit port; d. a centralconductor extending along the at least one passage from the entry portto the exit port; and e. at a plurality of locations along a length ofthe passage, a pair of conductive stubs extending from approximately thesame position along a length of the passage, one having an inductiveproperty and the other having a capacitive property, each extending intoa closed channel that extends from a side of the passage, wherein thesuccessive locations along the length of the passage are spaced byapproximately one-quarter of a propagation wavelength, or an integralmultiple thereof, within the passage for a frequency to be passed by thecomponent, wherein one or more of the following conditions are met (1)the central conductor, the conductive structure, and the conductivestubs are monolithic, (2) a cross-sectional dimension of the passageperpendicular to a propagation direction of the radiation along thepassage is less than about 1 mm, (3) more than about 50% of the passageis filled with a gaseous medium (4) at least a portion of the conductiveportions of the component are formed by an electrodeposition process,(5) at least a portion of the conductive portions of the component areformed from a plurality of successively deposited layers, (6) at least aportion of the passage has a generally rectangular shape, (7) at least aportion of the central conductor has a generally rectangular shape, (8)the passage extends along a two-dimensional non-linear path, (9) thepassage extends along a three-dimensional path, (10) the passagecomprises at least one curved region and a side wall of the passage inthe curved region has a nominally smaller radius than an oppositeside ofthe passage in the curved region and is provided with a plurality ofsurface oscillations having smaller radii, (11) the conductive structureis provided with channels at one or more locations where the electricalfield at a surface of the conductive structure, if it were there, wouldhave been less than about 20% of its maximum value within the passage(12) the conductive structure is provided with patches of a differentconductive material at one or more locations where the electrical fieldatthe surface of the conductive structure, if it were there, would havebeen less than about 20% of its maximum value within the passage, (13)mitered corners are used at at least some junctions for segments of thepassage that meet at angles between 60° and 120°, and/or (14) theconductive stubs are spaced at an integral multiple of one-quarter thewavelength and bulges on the central conductor or bulges extending fromthe conductive structure extend into the passage at one or morelocations spaced from the conductive stubs by an integral multiple ofapproximately one-half the wavelength, and wherein the surface of atleast one of the conductive structure or the central conductor comprisesa more conductive metal plated above a less conductive material.
 46. Acoaxial RF or microwave component that preferentially passes a radiationin a desired frequency band, comprising: a. at least one RF or microwaveradiation entry port in a conductive structure; b. at least one RF ormicrowave radiation exit port in the conductive structure; c. at leastone passage, substantially bounded on the sides by the conductivestructure, through which RF or microwave radiation passes when travelingfrom the at least one entry port to the at least one exit port; d. acentral conductor extending along the at least one passage from theentry port to the exit port; and e. at a plurality of locations along alength of the passage, a pair of conductive stubs extending fromapproximately the same position along a length of the passage, onehaving an inductive property and the other having a capacitive property,each extending into a closed channel that extends from a side of thepassage, wherein the successive locations along the length of thepassage are spaced by approximately one-quarter of a propagationwavelength, or an integral multiple thereof, within the passage for afrequency to be passed by the component, wherein one or more of thefollowing conditions are met (1) the central conductor, the conductivestructure, and the conductive stubs are monolithic, (2) across-sectional dimension of the passage perpendicular to a propagationdirection of the radiation along the passage is less than about 1 mm,(3) more than about 50% of the passage is filled with a gaseous medium(4) at least a portion of the conductive portions of the component areformed by an electrodeposition process, (5) at least a portion of theconductive portions of the component are formed from a plurality ofsuccessively deposited layers, (6) at least a portion of the passage hasa generally rectangular shape, (7) at least a portion of the centralconductor has a generally rectangular shape, (8) the passage extendsalong a two-dimensional non-linear path, (9) the passage extends along athree-dimensional path, (10) the passage comprises at least one curvedregion and a side wall of the passage in the curved region has anominally smaller radius than an opposite side of the passage in thecurved region and is provided with a plurality of surface oscillationshaving smaller radii, (11) the conductive structure is provided withchannels at one or more locations where the electrical field at asurface of the conductive structure, if it were there, would have beenless than about 20% of its maximum value within the passage (12) theconductive structure is provided with patches ofa different conductivematerial at one or more locations where the electrical field atthesurface of the conductive structure, if it were there, would have beenless than about 20% of its maximum value within the passage, (13)mitered corners are used at at least some junctions for segments of thepassage that meet at angles between 60° and 120°, and/or (14) theconductive stubs are spaced at an integral multiple of one-quarter the,wavelength and bulges on the central conductor or bulges extending fromthe conductive structure extend into the passage at one or morelocations spaced from the conductive stubs by an integral multiple ofapproximately one-half the wavelength, and wherein the desired frequencyband is centered around a frequency greater than about 2 GHz, morepreferably greater than about 10 GHz, and even more preferably greaterabout 20 GHz.
 47. A coaxial RF or microwave component thatpreferentially passes a radiation in a desired frequency band,comprising: a. at least one RF or microwave radiation entry port in aconductive structure; b. at least one RF or microwave radiation exitport in the conductive structure; c. at least one passage, substantiallybounded on the sides by the conductive structure, through which RF ormicrowave radiation passes when traveling from the at least one entryport to the at least one exit port; d. a central conductor extendingalong the at least one passage from the entry port to the exit port; ande. at a plurality of locations along a length of the passage, a pair ofconductive stubs extending from approximately the same position along alength of the passage, one having an inductive property and the otherhaving a capacitive property, each extending into a closed channel thatextends from a side of the passage, wherein the successive locationsalong the length of the passage are spaced by approximately one-quarterof a propagation wavelength, or an integral multiple thereof, within thepassage for a frequency to be passed bythe component, wherein one ormore of the following conditions are met (1) the central conductor, theconductive structure, and the conductive stubs are monolithic, (2) across-sectional dimension of the passage perpendicular to a propagationdirection of the radiation along the passage is less than about 1 mm,(3) more than about 50% of the passage is filled with a gaseous medium(4) at least a portion of the conductive portions of the component areformed by an electrodeposition process, (5) at least a portion of theconductive portions of the component are formed from a plurality ofsuccessively deposited layers, (6) at least a portion of the passage hasa generally rectangular shape, (7) at least a portion of the centralconductor has a generally rectangular shape, (8) the passage extendsalong a two-dimensional non-linear path, (9) the passage extends along athree-dimensional path, (10) the passage comprises at least one curvedregion and a side wall of the passage in the curved region has anominally smaller radius than an opposite side of the passage in thecurved region and is provided with a plurality of surface oscillationshaving smaller radii, (11) the conductive structure is provided withchannels at one or more locations where the electrical field at asurface of the conductive structure, if it were there, would have beenless than about 20% of its maximum value, within the passage (12) theconductive structure is provided with patches of a different conductivematerial at one or more locations where the electrical field at thesurface of the conductive structure, if it were there, would have beenless than about 20% of its maximum value within the passage, (13)mitered corners are used at at least some junctions for segments of thepassage that meet at angles between 60° and 120°, and/or (14) theconductive stubs are spaced at an integral multiple of one-quarter thewavelength and bulges on the central conductor or bulges extending fromthe conductive structure extend into the passage at one or morelocations spaced from the conductive stubs by an integral multiple ofapproximately one-half the wavelength, and wherein the at least one pairof stubs comprises one stub having a length greater than aboutone-quarter the wavelength and a second stub having a length less thanabout one-quarter the wavelength, and the component includes at leastthree pairs of stubs, more preferably at least four pairs stubs, andmost preferably at least five pairs of stubs.
 48. An RF or microwavecomponent that guides or controls radiation, comprising: a. at least oneRF or microwave energy entry port in a conductive metal structure; andb. at least one passage substantially bounded on the sides by theconductive metal structure through which RF or microwave energy passeswhen traveling from the at least one entry port; wherein at least aportion of the conductive metal structure comprises a metal and whereinthe conductive metal structure is fabricated from a plurality ofsuccessively deposited layers, using one or more of the followingoperations: i. forming at least one of the plurality of layers byselectively electrodepositing a first conductive material andelectrodepositing a second conductive material, wherein one of the firstor second conductive materials is a sacrificial material and the otheris a structural material which comprises the metal, and wherein afterformation of the plurality of layers the sacrificial material isremoved; ii. forming at least one of the plurality of layers byelectrodepositing a first conductive material, selectively etching thefirst conductive material to create at least one void, andelectrodepositing a second conductive material to fill the at least onevoid, wherein one of the first or second conducitve materials comprisesthe metal and the other of the first or second materials comprises asacrificial material, and wherein after formation of the plurality oflayers the sacrificial material is removed; and/or iv. forming at leastone of the plurality of layers by selectively electrodepositing a firstconductive material, then electrodepositing a second conductivematerial, then selectivelyetching one of the first or second conductivematerials, and then electrodepositing a third conductive material,wherein at least one of the first, second, or third conductive materialsis a sacrificial material and at least one of the remaining twoconductive materials is a structural material comprising the metal, andwherein after formation of the plurality of layers the sacrificialmaterial is removed.
 49. The component of claim 48 additionallycomprising at least one RF or microwave energy exit port in theconductive metal structure.
 50. The component of claims 48 wherein oneor more of the following conditions are met: (1) a cross-sectionaldimension of the passage perpendicular to a propagation direction of theradiation along the passage is less than about 1 mm, more preferablyless than about 0.5 mm, and most preferably less than about 0.25 mm, (2)more than about 50% of the passage is filled with a gaseous medium, morepreferably more than about 70% of the passage is filled with a gaseousmedium, and most preferably more than about 90% of the passage is filledwith a gaseous medium, (3) at least a portion of the passage has agenerally rectangular shape, (4) at least a portion of the centralconductor has a generally rectangular shape, (5) the passage extendsalong a two-dimensional non-linear path, (6) the passage extends along athree-dimensional path, (7) the passage comprises at least one curvedregion and a side wall of the passage in the curved region has anominally smaller radius than an opposite side of the passage in thecurved region and is provided with a plurality of surface oscillationshaving smaller radii, (8) the conductive structure is provided withchannels at one or more locations where the electrical field at asurface of the conductive structure, if it were there, would have beenless than about 20% of its maximum value within the passage, morepreferably less than 10% of its maximum value within the passage, evenmore preferably less than 5% of its maximum value within the passage,and most preferably where the electrical field would have beenapproximately zero, (9) theconductive structure is provided with patchesof a different conductive material at one or more locations where theelectrical field at the surface of the conductive structure, if it werethere, would have been less than about 20% of its maximum value withinthe passage more preferably less than about 10% of its maximum valuewithin the passage, even more preferably less than about 5% of itsmaximum value within the passage, and most preferably where theelectrical field would have been approximately zero, (10) miteredcorners are used at least some junctions for segments of the passagethat meet at angles between 60° and 120°, and/or (11) the conductivestubs are spaced at an integral multiple of one-quarter the wavelengthand bulges on the central conductor or bulges extending from theconductive structure extend into the passage at one or more locationsspaced from the conductive stubs by an integral multiple ofapproximately one-half the wavelength, (12) the conductive structure ismonolithic.
 51. The component of claim 48 additionally comprising amagnetic material located within the conductive structure.
 52. Thecomponent of claim 51 wherein the magnetic material comprises a magneticmaterial in a solidified dielectric binder.
 53. The component of claim51 wherein the binder is a polymerized material.
 54. The component ofclaim 51 wherein the magnetic material comprises a sintered magneticmaterial.
 55. The component of claim 51 wherein the component comprisesone or more of an isolator, a circulator, a phase shifter, a tunablefilter, or a switch.
 56. The component of claims 48 additionallycomprising an RF or microwave absorptive material comprised of aparticulate conductive material embedded in a solidified dielectricbinder.
 57. The component of claim 48 additionally comprising an RF ormicrowave absorptive material comprised of a particulate conductivematerial embedded in a solidified dielectric binder wherein theparticulate conductive material comprises carbon.
 58. The component ofclaim 48 wherein the at least one passage extends along athree-dimensional path.
 59. The component of claim 58 wherein thethree-dimensional path comprises a three-dimensional spiral.
 60. Thecomponent claim 48, a wherein the component comprises one or more of alow pass filter, a high pass filter, a band pass filter, a reflectionbase filter, an absorption based filter, a leaky wall filter, a delayline, an impedance matching structure for connecting other functionalcomponents, an antennae, a feedhorn, a directional coupler, or acombiner (e.g. a quadrature hybrid, a hybrid ring, a Wilkinson combiner,a magic T).
 61. The component of claim 48, wherein the componentcomprises one or more of a microminiature coaxial component, atransmission line, a low pass filter, a high pass filter, a band passfilter, a reflection-based filter, an absorption-based filter, a leakywall filter, a delay line, an impedance matching structure forconnecting other functional components, a directional coupler, a powercombiner (e.g., Wilkinson), a power splitter, a hybrid combiner, a magicTEE, a frequency multiplexer, or a frequency demultiplexer, a pyramidal(smooth wall) feedhorn antenna, and/or a scalar (corrugated wall)feedhorn antenna.
 62. An RF or microwave component that guides orcontrols radiation, comprising: a. at least one RF or microwave energyentry port in a conductive metal structure; and b. at least one passagesubstantially bounded on the sides by the conductive metal structurethrough which RF or microwave energy passes when traveling from the atleast one entry port; wherein at least a portion of the conductive metalstructure comprises a metal, wherein forming of the conductive metalstructure comprises forming a plurality of successively deposited layerswhere each layer comprises at least one structural material, whichcomprises the metal, and at least one sacrificial material, and whereinthe forming of the conductive metal structure comprises one or more ofthe following operations: a. separating at least one sacrificialmaterial from at least one structural material; b. separating a firstsacrificial material from a second sacrificial material and from themetal to create a void, then filling at least a portion of the void witha dielectric material, and thereafter separating the second sacrificialmaterial from the metal and from the dielectric material; and/or c.filling a void in the metal with a magnetic or conductive materialembedded in a flowable dielectric material and thereafter solidifyingthe dielectric material.
 63. An electrical device, comprising aplurality of layers of successively deposited material, wherein thepattern resulting from the depositions provide at least one structurethat is usable as an electrical device and wherein the device comprisesan RF switch wherein a control electrode for the switch is at adifferent elevation than either contact element of the switch.
 64. Amicrotoroidal inductor comprising a plurality of conductive loopelements configured to form at least a portion of a toroidal patternwherein the toroidal pattern may be construed to have an inner diameterand an outer diameter and wherein at least a portion of the plurality ofloops have a larger cross-sectional dimension in proximity to the outerdiameter than in proximity to the inner diameter.